Chithunzi cha WSD100N06GDN56 N-channel 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD100N06GDN56 MOSFET ndi 60V, pano ndi 100A, kukana ndi 3mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
Zida zamagetsi zamagetsi MOSFET, PDs MOSFET, drones MOSFET, ndudu zamagetsi MOSFET, zida zazikulu za MOSFET, ndi zida zamagetsi MOSFET.
WINSOK MOSFET imafanana ndi manambala amtundu wina
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOS2XFET PDC69
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi | ||
| VDS | Mphamvu yamagetsi ya Drain-Source | 60 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID1, 6 | Kukhetsa Kopitirizabe Panopa | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Pulsed Drain Current | TC=25°C | 240 | A | |
| PD | Maximum Power Dissipation | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche Current, Single pulse | 45 | A | ||
| EAS3 | Single Pulse Avalanche Energy | 101 | mJ | ||
| TJ | Maximum Junction Kutentha | 150 | ℃ | ||
| Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ | ||
| RθJA1 | Thermal Resistance Junction kuti ikhale yozungulira | Khazikika | 55 | ℃/W | |
| RθJC1 | Thermal Resistance-Junction to Case | Khazikika | 1.5 | ℃/W | |
| Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo | |
| Zokhazikika | |||||||
| V(BR)DSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Panopa | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| Zithunzi za IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ± 100 | nA | |||
| Pa Makhalidwe | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS (yayatsidwa)2 | Drain-Source On-state Resistance | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Kusintha | |||||||
| Qg | Total Gate Charge | VDS=30V VGS = 10V ID=20A | 58 | nC | |||
| Qgs | Kulipira kwa Gate-Sour | 16 | nC | ||||
| Qgd | Kulipira kwa Gate-Drain | 4.0 | nC | ||||
| td (pa) | Yatsani Kuchedwa Nthawi | VGEN = 10V VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Yatsani Nthawi Yokwera | 8 | ns | ||||
| td (kuchotsa) | Kuyimitsa Kuchedwa Nthawi | 50 | ns | ||||
| tf | Nthawi Yoyimitsa Kugwa | 11 | ns | ||||
| Rg | Kukaniza gat | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Zamphamvu | |||||||
| Ciss | Mu Capacitance | VGS = 0V VDS=30V f=1MHz | 3458 | pF | |||
| Koss | Out Capacitance | 1522 | pF | ||||
| Crss | Reverse Transfer Capacitance | 22 | pF | ||||
| Makhalidwe a Drain-Source Diode ndi Mayeso Opambana | |||||||
| IS1,5 | Continuous Source Current | VG=VD=0V , Force Current | 55 | A | |||
| ISM | Pulsed Source Current3 | 240 | A | ||||
| VSD2 | Diode Forward Voltage | ISD = 1A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Reverse Recovery Time | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Charge | 33 | nC | ||||
