WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala Yachitsanzo:Chithunzi cha WSD2090DN56

BVDSS:20 V

RDSON:2.8mΩ

ID:80A

Channel:N-channel

Phukusi:DFN5*6-8

Chilimwe Chakugulitsa:Magetsi a WSD2090DN56 MOSFET ndi 20V, pano ndi 80A, kukana ndi 2.8mΩ, njira ndi N-channel, ndi phukusi ndi DFN5 * 6-8.

Mapulogalamu:Ndudu zamagetsi, ma drones, zida zamagetsi, mfuti za fascia, PD, zida zazing'ono zapakhomo, ndi zina zambiri.

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Kugwiritsa ntchito

Zogulitsa Tags

Kufotokozera Kwambiri

WSD2090DN56 ndiye njira yopambana kwambiri ya N-Ch MOSFET yokhala ndi kachulukidwe kakang'ono kwambiri ka cell, yomwe imapereka RDSON yabwino kwambiri komanso chipata chazipata zamapulogalamu ambiri osinthira buck.WSD2090DN56 imakwaniritsa zofunikira za RoHS ndi Green Product 100% EAS zotsimikizika ndi kudalirika kwathunthu kwa ntchito zovomerezeka.

Mawonekedwe

Ukadaulo wapamwamba kwambiri wama cell density Trench, Super Low Gate Charge, CdV / dt zotsatira zatsika kwambiri, 100% EAS Yotsimikizika, Chipangizo Chobiriwira Chikupezeka

Mapulogalamu

Sinthani, Power System, Load switch, ndudu zamagetsi, ma drones, zida zamagetsi, mfuti za fascia, PD, zida zazing'ono zapakhomo, ndi zina zambiri.

nambala yazinthu zofananira

AOS AON6572

Zofunikira zofunika

Mtheradi Wopambana Kwambiri (TC=25℃pokhapokha ngati tawonetsa mwanjira ina)

Chizindikiro	Parameter	Max.	Mayunitsi
VDSS	Mphamvu yamagetsi ya Drain-Source	20	V
Zithunzi za VGSS	Gate-Source Voltage	±12	V
ID@TC=25℃	Kukhetsa Kopitirira Pano, VGS @ 10V1	80	A
ID@TC=100℃	Kukhetsa Kopitirira Pano, VGS @ 10V1	59	A
IDM	Pulsed Drain Current note1	360	A
EAS	Single Pulsed Avalanche Energy note2	110	mJ
PD	Kutaya Mphamvu	81	W
RJA	Kukaniza kwa Thermal, Junction to Case	65	℃/W
RθJC	Thermal Resistance Junction-Case 1	4	℃/W
TJ, TSTG	Opaleshoni ndi Kusungira Kutentha Range	-55 mpaka +175	℃

Makhalidwe Amagetsi (TJ=25 ℃, pokhapokha ngati tafotokozera mwanjira ina)

Chizindikiro	Parameter	Zoyenera	Min	Lembani	Max	Mayunitsi
BVDSS	Kutaya-Magwero Kuwonongeka kwa Voltage	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	25 ℃ ID = 1mA	---	0.018	---	V/℃
VGS (th)	Gate Threshold Voltage	VDS= VGS, ID=250μA	0.50	0.65	1.0	V
RDS(ON)	Static Drain-Source On-Resistance	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
RDS(ON)	Static Drain-Source On-Resistance	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	Zero Gate Voltage Drain Panopa	VDS=20V,VGS=0V	---	---	1	μA
Zithunzi za IGSS	Gate-Body Leakage Current	VGS=±10V, VDS=0V	---	---	± 100	nA
Ciss	Input Capacitance	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Koss	Mphamvu Zotulutsa		---	460	---
Crss	Reverse Transfer Capacitance		---	446	---
Qg	Total Gate Charge	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Gate-Source Charge		---	1.73	---
Qgd	Kulipira kwa Gate-Drain		---	3.1	---
tD (pa)	Yatsani Kuchedwa Nthawi	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Yatsani Nthawi Yokwera		---	37	---
tD (kuchotsa)	Kuyimitsa Kuchedwa Nthawi		---	63	---
tf	Nthawi yakugwa yotseka		---	52	---
VSD	Diode Forward Voltage	IS=7.6A,VGS=0V	---	---	1.2	V