WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD25280DN56G MOSFET ndi 25V, pano ndi 280A, kukana ndi 0.7mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
High Frequency Point-of-Load Synchronous,Buck Converter,Networking DC-DC Power System,Power Tool Application,E-fodya MOSFET, MOSFET charging opanda zingwe, drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu za digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.
WINSOK MOSFET imafanana ndi manambala amtundu wina
Nxperian MOSFET PSMN1R-4ULD.
POTENS Semiconductor MOSFET PDC262X.
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi |
| VDS | Mphamvu yamagetsi ya Drain-Source | 25 | V |
| VGS | Gate-Sourndi Voltage | ±20 | V |
| ID@TC=25℃ | Kukhetsa Kopitirizabe Panopa(Malingaliro a kampani Silicon Limited）1, 7 | 280 | A |
| ID@TC= 70℃ | Continuous Drain Current (Silicon Limited）1, 7 | 190 | A |
| IDM | Pulsed Drain Current2 | 600 | A |
| EAS | Single Pulse Avalanche Energy3 | 1200 | mJ |
| IAS | Avalanche Current | 100 | A |
| PD@TC=25℃ | Kuwonongeka kwa Mphamvu Zonse4 | 83 | W |
| Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 mpaka 150 | ℃ |
| Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo |
| BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0v ineD= 250uA | 25 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKutentha kwa Coefficient | Reference ku 25℃,ineD=1mA | --- | 0.022 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10v ineD=20A | --- | 0.7 | 0.9 | mΩ |
| VGS= 4.5V , ineD=20A | --- | 1.4 | 1.9 | |||
| VGS (th) | Gate Threshold Voltage | VGS=VDS,ineD= 250uA | 1.0 | --- | 2.5 | V |
| △VGS(th) | VGS(th)Kutentha kwa Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS= 20V , VGS=0V ,TJ=25℃ | --- | --- | 1 | uA |
| VDS= 20V , VGS=0V ,TJ= 55℃ | --- | --- | 5 | |||
| Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20v, ndiDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5v ineD=10A | --- | 40 | --- | S |
| Rg | Kukaniza Chipata | VDS= 0V , VGS=0V , f=1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS= 15V , VGS= 4.5V , ineD=20A | --- | 72 | --- | nC |
| Qgs | Gate-Source Charge | --- | 18 | --- | ||
| Qgd | Kulipira kwa Gate-Drain | --- | 24 | --- | ||
| Td (pa) | Yatsani Kuchedwa Nthawi | VDD= 15V , VGEN=10V ,RG=1Ω,ineD=10A | --- | 33 | --- | ns |
| Tr | Nthawi Yokwera | --- | 55 | --- | ||
| Td (kuchoka) | Nthawi Yochedwa Kuzimitsa | --- | 62 | --- | ||
| Tf | Nthawi Yogwa | --- | 22 | --- | ||
| Ciss | Input Capacitance | VDS= 15V , VGS=0V , f=1MHz | --- | 7752 | --- | pF |
| Koss | Mphamvu Zotulutsa | --- | 1120 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 650 | --- |
