WSD30140DN56 N-channel 30V 85A DFN5*6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala Yachitsanzo:Chithunzi cha WSD30140DN56

BVDSS:30 v

RDSON:1.7mΩ

ID:85A

Channel:N-channel

Phukusi:DFN5*6-8

Chilimwe Chakugulitsa:Magetsi a WSD30140DN56 MOSFET ndi 30V, pano ndi 85A, kukana ndi 1.7mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5 * 6-8.

Mapulogalamu:Ndudu zamagetsi, ma charger opanda zingwe, ma drones, chithandizo chamankhwala, ma charger agalimoto, zowongolera, zinthu zama digito, zida zazing'ono, zamagetsi ogula, ndi zina zambiri.

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Kufotokozera Kwambiri

WSD30140DN56 ndiye njira yapamwamba kwambiri ya N-channel MOSFET yokhala ndi kachulukidwe kakang'ono kwambiri ka cell yopereka RDSON yabwino kwambiri komanso chipata chazipata zamapulogalamu ambiri osinthika a buck.WSD30140DN56 ikugwirizana ndi RoHS ndi zofunikira zobiriwira, chitsimikizo cha 100% EAS, kudalirika kwathunthu kwa ntchito kuvomerezedwa.

Mawonekedwe

Advanced high cell density Trench technology, Ultra-low gate charge, CdV/dt effect attenuation, 100% EAS chitsimikizo, zida zobiriwira zilipo

Mapulogalamu

Kulunzanitsa kwapang'onopang'ono, zosinthira ndalama, makina amagetsi a DC-DC, zida zamagetsi, ndudu zamagetsi, kuyitanitsa opanda zingwe, ma drones, chithandizo chamankhwala, kulipiritsa magalimoto, owongolera, zinthu zama digito, zida zazing'ono, zamagetsi zamagetsi

nambala yazinthu zofananira

AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314.Zithunzi za NTMFS4847NChithunzi cha VISHAY SiRA62DP.Chithunzi cha STL86N3LLH6AGChithunzi cha BSC050N03MSG.TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A.Mtengo wa PH2520U.TOSHIBA TPH4R803PL TPH3R203NL.ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN.PANJIT PJQ5410.AP3D5R0MT.NIKO PK610SA, PK510BA.Zithunzi za PDC3803R

Zofunikira zofunika

Chizindikiro	Parameter	Muyezo	Mayunitsi
VDS	Mphamvu yamagetsi ya Drain-Source	30	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Kukhetsa Kopitirira Pano, VGS @ 10V1,7	85	A
ID@TC=70℃	Kukhetsa Kopitirira Pano, VGS @ 10V1,7	65	A
IDM	Pulsed Drain Current2	300	A
PD@TC=25℃	Kuwonongeka kwa Mphamvu Zonse4	50	W
Mtengo wa TSTG	Kusungirako Kutentha Kusiyanasiyana	-55 mpaka 150	℃
TJ	Operating Junction Temperature Range	-55 mpaka 150	℃

Chizindikiro	Parameter	Zoyenera	Min.	Lembani.	Max.	Chigawo
BVDSS	Kutaya-Magwero Kuwonongeka kwa Voltage	VGS=0V , ID=250uA	30	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	25 ℃, ID=1mA	---	0.02	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=20A	---	1.7	2.4	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=15A		2.5	3.3	mΩ
VGS (th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.7	2.5	V
	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=55℃	---	---	5	uA
Zithunzi za IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	± 100	nA
gfs	Forward Transconductance	VDS=5V , ID=20A	---	90	---	S
Qg	Total Gate Charge (4.5V)	VDS=15V , VGS=4.5V , ID=20A	---	26	---	nC
Qgs	Gate-Source Charge		---	9.5	---
Qgd	Kulipira kwa Gate-Drain		---	11.4	---
Td (pa)	Yatsani Kuchedwa Nthawi	VDD=15V , VGEN=10V , RG=3Ω, RL=0.75Ω.	---	11	---	ns
Tr	Nthawi Yokwera		---	6	---
Td (kuchoka)	Nthawi Yochedwa Kuzimitsa		---	38.5	---
Tf	Nthawi Yogwa		---	10	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	3000	---	pF
Koss	Mphamvu Zotulutsa		---	1280	---
Crss	Reverse Transfer Capacitance		---	160	---