Chithunzi cha WSD30150ADN56 N-channel 30V 145A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD30150DN56 MOSFET ndi 30V, pano ndi 150A, kukana ndi 1.8mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
E-ndudu MOSFET, MOSFET yochapira opanda zingwe, ma drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu zama digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.
WINSOK MOSFET imafanana ndi manambala amtundu wina
AOS MOSFET AON6512,AONS3234.
Onsemi,FAIRCHILD MOSFET FDMC81DCCM.
Zithunzi za NXP MOSFET PSMN1R7-3YL.
TOSHIBA MOSFET TPH1R43NL.
PANJIT MOSFET PJQ5428.
NIKO-SEM MOSFET PKC26BB,PKE24BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi |
| VDS | Mphamvu yamagetsi ya Drain-Source | 30 | V |
| VGS | Gate-Sourndi Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS@10v1, 7 | 150 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS@10v1, 7 | 83 | A |
| IDM | Pulsed Drain Current2 | 200 | A |
| EAS | Single Pulse Avalanche Energy3 | 125 | mJ |
| IAS | Avalanche Current | 50 | A |
| PD@TC=25℃ | Kuwonongeka kwa Mphamvu Zonse4 | 62.5 | W |
| Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 mpaka 150 | ℃ |
| Chizindikiro | Parameter | Zoyenera | Min. | Lembani. | Max. | Chigawo |
| BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0v ineD= 250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKutentha kwa Coefficient | Reference ku 25℃,ineD=1mA | --- | 0.02 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10v ineD=20A | --- | 1.8 | 2.4 | mΩ |
| VGS= 4.5V , ineD=15A | 2.4 | 3.2 | ||||
| VGS (th) | Gate Threshold Voltage | VGS=VDS,ineD= 250uA | 1.4 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th)Kutentha kwa Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS= 24V , VGS=0V ,TJ=25℃ | --- | --- | 1 | uA |
| VDS= 24V , VGS=0V ,TJ= 55℃ | --- | --- | 5 | |||
| Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20v, ndiDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5v ineD=10A | --- | 27 | --- | S |
| Rg | Kukaniza Chipata | VDS= 0V , VGS=0V , f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS= 15V , VGS= 4.5V , ineD=30A | --- | 26 | --- | nC |
| Qgs | Gate-Source Charge | --- | 9.5 | --- | ||
| Qgd | Kulipira kwa Gate-Drain | --- | 11.4 | --- | ||
| Td (pa) | Yatsani Kuchedwa Nthawi | VDD= 15V , VGEN=10V , RG=6Ω,ineD=1A, RL=15Ω. | --- | 20 | --- | ns |
| Tr | Nthawi Yokwera | --- | 12 | --- | ||
| Td (kuchoka) | Nthawi Yochedwa Kuzimitsa | --- | 69 | --- | ||
| Tf | Nthawi Yogwa | --- | 29 | --- | ||
| Ciss | Input Capacitance | VDS= 15V , VGS=0V , f=1MHz | 2560 | 3200 | 3850 | pF |
| Koss | Mphamvu Zotulutsa | 560 | 680 | 800 | ||
| Crss | Reverse Transfer Capacitance | 260 | 320 | 420 |
