WSD30160DN56 N-channel 30V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD30160DN56 MOSFET ndi 30V, pano ndi 120A, kukana ndi 1.9mΩ, njira ndi N-channel, ndi phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
E-fodya MOSFET, opanda zingwe charging MOSFET, drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu za digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.
WINSOK MOSFET imafanana ndi manambala amtundu wina
AOS MOSFET AON6382,AON6384,AON644A,AON6548.
Onsemi,FAIRCHILD MOSFET NTMFS4834N,NTMFS4C5N.
TOSHIBA MOSFET TPH2R93PL.
PANJIT MOSFET PJQ5426.
NIKO-SEM MOSFET PKE1BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi |
| VDS | Mphamvu yamagetsi ya Drain-Source | 30 | V |
| VGS | Gate-Sourndi Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS@10v1, 7 | 120 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS@10v1, 7 | 68 | A |
| IDM | Pulsed Drain Current2 | 300 | A |
| EAS | Single Pulse Avalanche Energy3 | 128 | mJ |
| IAS | Avalanche Current | 50 | A |
| PD@TC=25℃ | Kuwonongeka kwa Mphamvu Zonse4 | 62.5 | W |
| Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 mpaka 150 | ℃ |
| Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo |
| BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0v ineD= 250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKutentha kwa Coefficient | Reference ku 25℃,ineD=1mA | --- | 0.02 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10v ineD=20A | --- | 1.9 | 2.5 | mΩ |
| VGS= 4.5V , ineD=15A | --- | 2.9 | 3.5 | |||
| VGS (th) | Gate Threshold Voltage | VGS=VDS,ineD= 250uA | 1.2 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th)Kutentha kwa Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS= 24V , VGS=0V ,TJ=25℃ | --- | --- | 1 | uA |
| VDS= 24V , VGS=0V ,TJ= 55℃ | --- | --- | 5 | |||
| Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20v, ndiDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5v ineD=10A | --- | 32 | --- | S |
| Rg | Kukaniza Chipata | VDS= 0V , VGS=0V , f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS= 15V , VGS= 4.5V , ineD=20A | --- | 38 | --- | nC |
| Qgs | Gate-Source Charge | --- | 10 | --- | ||
| Qgd | Kulipira kwa Gate-Drain | --- | 13 | --- | ||
| Td (pa) | Yatsani Kuchedwa Nthawi | VDD= 15V , VGEN=10V , RG=6Ω,ineD=1A, RL=15Ω. | --- | 25 | --- | ns |
| Tr | Nthawi Yokwera | --- | 23 | --- | ||
| Td (kuchoka) | Nthawi Yochedwa Kuzimitsa | --- | 95 | --- | ||
| Tf | Nthawi Yogwa | --- | 40 | --- | ||
| Ciss | Input Capacitance | VDS= 15V , VGS=0V , f=1MHz | --- | 4900 pa | --- | pF |
| Koss | Mphamvu Zotulutsa | --- | 1180 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 530 | --- |
