WSD3023DN56 N-Ch ndi P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
Kufotokozera Kwambiri
WSD3023DN56 ndiye njira yopambana kwambiri ya N-ch ndi P-ch MOSFET yokhala ndi kachulukidwe kakang'ono kwambiri ka cell, yomwe imapereka RDSON yabwino kwambiri komanso chiwongolero chazipata pamapulogalamu ambiri osinthira a buck. WSD3023DN56 imakwaniritsa zofunikira za RoHS ndi Green Product 100% EAS zotsimikizika ndi kudalirika kokwanira kovomerezeka.
Mawonekedwe
Advanced high cell density Trench ukadaulo, Super Low Gate Charge, Zabwino kwambiri CdV/dt zotsatira zatsika, 100% EAS Yotsimikizika, Green Chipangizo Chikupezeka.
Mapulogalamu
High Frequency Point-of-Load Synchronous Buck Converter ya MB/NB/UMPC/VGA,Networking DC-DC Power System,CCFL Back-light Inverter,Drones, mota, zamagetsi zamagalimoto, zida zazikuluzikulu.
nambala yazinthu zofananira
PANJIT PJQ5606
Zofunikira zofunika
Chizindikiro | Parameter | Muyezo | Mayunitsi | |
N-Ch | P-Ch | |||
VDS | Mphamvu yamagetsi ya Drain-Source | 30 | -30 | V |
VGS | Gate-Source Voltage | ±20 | ±20 | V |
ID | Kukhetsa Kopitirizabe Panopa, VGS(NP)=10V,Ta=25℃ | 14* | -12 | A |
Kukhetsa Kopitirizabe Panopa, VGS(NP)=10V,Ta=70℃ | 7.6 | -9.7 | A | |
IDP a | Pulse Drain Current Tested, VGS(NP)=10V | 48 | -48 | A |
EAS c | Avalanche Energy, Single pulse, L=0.5mH | 20 | 20 | mJ |
IAS c | Avalanche Current, Single pulse, L=0.5mH | 9 | -9 | A |
PD | Kutaya Mphamvu Zonse, Ta=25℃ | 5.25 | 5.25 | W |
Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 175 | -55 mpaka 175 | ℃ |
TJ | Operating Junction Temperature Range | 175 | 175 | ℃ |
RqJA b | Thermal Resistance-Junction to Ambient, Steady State | 60 | 60 | ℃/W |
RqJC | Thermal Resistance-Junction to Case,Steady State | 6.25 | 6.25 | ℃/W |
Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo |
BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
RDS(ON)d | Static Drain-Source On-Resistance | VGS=10V , ID=8A | --- | 14 | 18.5 | mΩ |
VGS=4.5V , ID=5A | --- | 17 | 25 | |||
VGS (th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.3 | 1.8 | 2.3 | V |
IDSS | Drain-Source Leakage Current | VDS=20V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=20V , VGS=0V , TJ=85℃ | --- | --- | 30 | |||
Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ± 100 | nA |
Rg | Kukaniza Chipata | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | 3.4 | Ω |
Qge | Total Gate Charge | VDS=15V, VGS=4.5V, IDS=8A | --- | 5.2 | --- | nC |
Qgse | Gate-Source Charge | --- | 1.0 | --- | ||
Qgde | Kulipira kwa Gate-Drain | --- | 2.8 | --- | ||
Td (pa) e | Yatsani Kuchedwa Nthawi | VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R. | --- | 6 | --- | ns |
Tre | Nthawi Yokwera | --- | 8.6 | --- | ||
Td(kuchoka)e | Nthawi Yochedwa Kuzimitsa | --- | 16 | --- | ||
Tfe | Nthawi Yogwa | --- | 3.6 | --- | ||
Cisse | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 545 | --- | pF |
Kose | Mphamvu Zotulutsa | --- | 95 | --- | ||
Crsse | Reverse Transfer Capacitance | --- | 55 | --- |