WSD3023DN56 N-Ch ndi P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

mankhwala

WSD3023DN56 N-Ch ndi P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

Kufotokozera mwachidule:


  • Nambala Yachitsanzo:WSD3023DN56
  • BVDSS:30V / -30V
  • RDSON:14mΩ/23mΩ
  • ID:14A/-12A
  • Channel:N-C ndi P-Channel
  • Phukusi:DFN5*6-8
  • Chilimwe Chakugulitsa:Magetsi a WSD3023DN56 MOSFET ndi 30V/-30V, pano ndi14A/-12A, kukana ndi 14mΩ/23mΩ, njira ndi N-Ch ndi P-Channel, ndipo phukusi ndi DFN5 * 6-8.
  • Mapulogalamu:Drones, motors, zamagetsi zamagalimoto, zida zazikulu.
  • Tsatanetsatane wa Zamalonda

    Kugwiritsa ntchito

    Zolemba Zamalonda

    Kufotokozera Kwambiri

    WSD3023DN56 ndiye njira yopambana kwambiri ya N-ch ndi P-ch MOSFET yokhala ndi kachulukidwe kakang'ono kwambiri ka cell, yomwe imapereka RDSON yabwino kwambiri komanso chiwongolero chazipata pamapulogalamu ambiri osinthira a buck. WSD3023DN56 imakwaniritsa zofunikira za RoHS ndi Green Product 100% EAS zotsimikizika ndi kudalirika kokwanira kovomerezeka.

    Mawonekedwe

    Advanced high cell density Trench ukadaulo, Super Low Gate Charge, Zabwino kwambiri CdV/dt zotsatira zatsika, 100% EAS Yotsimikizika, Green Chipangizo Chikupezeka.

    Mapulogalamu

    High Frequency Point-of-Load Synchronous Buck Converter ya MB/NB/UMPC/VGA,Networking DC-DC Power System,CCFL Back-light Inverter,Drones, mota, zamagetsi zamagalimoto, zida zazikuluzikulu.

    nambala yazinthu zofananira

    PANJIT PJQ5606

    Zofunikira zofunika

    Chizindikiro Parameter Muyezo Mayunitsi
    N-Ch P-Ch
    VDS Mphamvu yamagetsi ya Drain-Source 30 -30 V
    VGS Gate-Source Voltage ±20 ±20 V
    ID Kukhetsa Kopitirizabe Panopa, VGS(NP)=10V,Ta=25℃ 14* -12 A
    Kukhetsa Kopitirizabe Panopa, VGS(NP)=10V,Ta=70℃ 7.6 -9.7 A
    IDP a Pulse Drain Current Tested, VGS(NP)=10V 48 -48 A
    EAS c Avalanche Energy, Single pulse, L=0.5mH 20 20 mJ
    IAS c Avalanche Current, Single pulse, L=0.5mH 9 -9 A
    PD Kutaya Mphamvu Zonse, Ta=25℃ 5.25 5.25 W
    Mtengo wa TSTG Kusungirako Kutentha Kusiyanasiyana -55 mpaka 175 -55 mpaka 175
    TJ Operating Junction Temperature Range 175 175
    RqJA b Thermal Resistance-Junction to Ambient, Steady State 60 60 ℃/W
    RqJC Thermal Resistance-Junction to Case,Steady State 6.25 6.25 ℃/W
    Chizindikiro Parameter Mikhalidwe Min. Lembani. Max. Chigawo
    BVDSS Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0V , ID=250uA 30 --- --- V
    RDS(ON)d Static Drain-Source On-Resistance VGS=10V , ID=8A --- 14 18.5
    VGS=4.5V , ID=5A --- 17 25
    VGS (th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.3 1.8 2.3 V
    IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25℃ --- --- 1 uA
    VDS=20V , VGS=0V , TJ=85℃ --- --- 30
    Zithunzi za IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA
    Rg Kukaniza Chipata VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω
    Qge Total Gate Charge VDS=15V, VGS=4.5V, IDS=8A --- 5.2 --- nC
    Qgse Gate-Source Charge --- 1.0 ---
    Qgde Kulipira kwa Gate-Drain --- 2.8 ---
    Td (pa) e Yatsani Kuchedwa Nthawi VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R. --- 6 --- ns
    Tre Nthawi Yokwera --- 8.6 ---
    Td(kuchoka)e Nthawi Yochedwa Kuzimitsa --- 16 ---
    Tfe Nthawi Yogwa --- 3.6 ---
    Cisse Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 545 --- pF
    Kose Mphamvu Zotulutsa --- 95 ---
    Crsse Reverse Transfer Capacitance --- 55 ---

  • Zam'mbuyo:
  • Ena:

  • Lembani uthenga wanu apa ndikutumiza kwa ife