WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET

mankhwala

WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:Chithunzi cha WSD30300DN56G

BVDSS:30 v

ID:300A

RDSON:0.7mΩ 

Channel:N-channel

Phukusi:DFN5X6-8


Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zogulitsa Tags

WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD20100DN56 MOSFET ndi 20V, pano ndi 90A, kukana ndi 1.6mΩ, njira ndi N-channel, ndi phukusi ndi DFN5X6-8.

Malo ogwiritsira ntchito WINSOK MOSFET

Ndudu zamagetsi MOSFET, drones MOSFET, zida zamagetsi MOSFET, fascia mfuti MOSFET, PD MOSFET, zida zazing'ono zapakhomo MOSFET.

WINSOK MOSFET imafanana ndi manambala amtundu wina

AOS MOSFET AON6572.

POTENS Semiconductor MOSFET PDC394X.

MOSFET magawo

Chizindikiro

Parameter

Muyezo

Mayunitsi

VDS

Mphamvu yamagetsi ya Drain-Source

20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Kukhetsa Kopitirizabe Panopa1

90

A

ID@TC=100℃

Kukhetsa Kopitirizabe Panopa1

48

A

IDM

Pulsed Drain Current2

270

A

EAS

Single Pulse Avalanche Energy3

80

mJ

IAS

Avalanche Current

40

A

PD@TC=25℃

Kuwonongeka kwa Mphamvu Zonse4

83

W

Mtengo wa TSTG

Kusungirako Kutentha Kusiyanasiyana

-55 mpaka 150

TJ

Operating Junction Temperature Range

-55 mpaka 150

RθJA

Thermal Resistance Junction-yozungulira1(t10S)

20

/W

RθJA

Thermal Resistance Junction-yozungulira1(Khazikika)

55

/W

RθJC

Thermal Resistance Junction-case1

1.5

/W

 

Chizindikiro

Parameter

Zoyenera

Min

Lembani

Max

Chigawo

BVDSS

Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0V , ID=250uA

20

23

---

V

VGS (th)

Gate Threshold Voltage VGS=VDS , ID =250uA

0.5

0.68

1.0

V

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=20A

---

1.6

2.0

RDS(ON)

Static Drain-Source On-Resistance2 VGS=4.5V , ID=20A  

1.9

2.5

RDS(ON)

Static Drain-Source On-Resistance2 VGS=2.5V , ID=20A

---

2.8

3.8

IDSS

Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25

---

---

1

uA

VDS=16V , VGS=0V , TJ=125

---

---

5

Zithunzi za IGSS

Gate-Source Leakage Current VGS=±10V , VDS=0V

---

---

±10

uA

Rg

Kukaniza Chipata VDS=0V , VGS=0V , f=1MHz

---

1.2

---

Ω

Qg

Chipata Chokwanira (10V) VDS=15V , VGS=10V , ID=20A

---

77

---

nC

Qgs

Gate-Source Charge

---

8.7

---

Qgd

Kulipira kwa Gate-Drain

---

14

---

Td (pa)

Yatsani Kuchedwa Nthawi VDD=15V , VGS=10V , RG=3 ,

ID=20A

---

10.2

---

ns

Tr

Nthawi Yokwera

---

11.7

---

Td (kuchoka)

Nthawi Yochedwa Kuzimitsa

---

56.4

---

Tf

Nthawi Yogwa

---

16.2

---

Ciss

Input Capacitance VDS=10V , VGS=0V , f=1MHz

---

4307

---

pF

Koss

Mphamvu Zotulutsa

---

501

---

Crss

Reverse Transfer Capacitance

---

321

---

IS

Continuous Source Current1, 5 VG=VD= 0V , Mphamvu Pakalipano

---

---

50

A

VSD

Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25

---

---

1.2

V

trr

Reverse Recovery Time IF=20A , di/dt=100A/µs ,

TJ=25

---

22

---

nS

Qrr

Reverse Recovery Charge

---

72

---

nC


  • Zam'mbuyo:
  • Ena:

  • Lembani uthenga wanu apa ndikutumiza kwa ife