WSD40120DN56G N-channel 40V 120A DFN5X6-8 WINSOK MOSFET

mankhwala

WSD40120DN56G N-channel 40V 120A DFN5X6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:Chithunzi cha WSD40120DN56G

BVDSS:40v ndi

ID:120A

RDSON:1.4mΩ 

Channel:N-channel

Phukusi:DFN5X6-8


Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zolemba Zamalonda

WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD40120DN56G MOSFET ndi 40V, pano ndi 120A, kukana ndi 1.4mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.

Malo ogwiritsira ntchito WINSOK MOSFET

E-fodya MOSFET, opanda zingwe charging MOSFET, drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu za digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.

WINSOK MOSFET imafanana ndi manambala amtundu wina

AOS MOSFET AON6234,AON6232,AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.

MOSFET magawo

Chizindikiro

Parameter

Muyezo

Mayunitsi

VDS

Mphamvu yamagetsi ya Drain-Source

40

V

VGS

Gate-Sourndi Voltage

±20

V

ID@TC=25

Continuous Drain Current, VGS@10v1

120

A

ID@TC=100

Continuous Drain Current, VGS@10v1

82

A

IDM

Pulsed Drain Current2

400

A

EAS

Single Pulse Avalanche Energy3

400

mJ

IAS

Avalanche Current

40

A

PD@TC=25

Kuwonongeka kwa Mphamvu Zonse4

125

W

Mtengo wa TSTG

Kusungirako Kutentha Kusiyanasiyana

-55 mpaka 150

TJ

Operating Junction Temperature Range

-55 mpaka 150

 

Chizindikiro

Parameter

Mikhalidwe

Min.

Lembani.

Max.

Chigawo

BVDSS

Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0v ineD= 250uA

40

---

---

V

BVDSS/△TJ

BVDSSKutentha kwa Coefficient Reference ku 25,ineD=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS = 10V , ID=20A

---

1.4

1.8

mΩ

RDS(ON)

Static Drain-Source On-Resistance2 VGS = 4.5V , ID=20A

---

2.0

2.6

VGS (th)

Gate Threshold Voltage VGS=VDS,ineD= 250uA

1.2

1.6

2.2

V

VGS(th)

VGS(th)Kutentha kwa Coefficient

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS= 32V , VGS=0V ,TJ=25

---

---

1

uA

VDS= 32V , VGS=0V ,TJ= 55

---

---

5

Zithunzi za IGSS

Gate-Source Leakage Current VGS=±20v, ndiDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS=5v ineD=20A

---

53

---

S

Rg

Kukaniza Chipata VDS= 0V , VGS=0V , f=1MHz

---

1.0

---

Ω

Qg

Chipata Chokwanira (10V) VDS= 15V , VGS=10v ineD=20A

---

45

---

nC

Qgs

Gate-Source Charge

---

12

---

Qgd

Kulipira kwa Gate-Drain

---

18.5

---

Td (pa)

Yatsani Kuchedwa Nthawi VDD= 15V , VGEN=10V , RG=3.3Ω,ineD=20A ,RL=15Ω.

---

18.5

---

ns

Tr

Nthawi Yokwera

---

9

---

Td (kuchoka)

Nthawi Yochedwa Kuzimitsa

---

58.5

---

Tf

Nthawi Yogwa

---

32

---

Ciss

Input Capacitance VDS= 20V , VGS=0V , f=1MHz --- 3972 ---

pF

Koss

Mphamvu Zotulutsa

---

1119 ---

Crss

Reverse Transfer Capacitance

---

82

---

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