WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET

mankhwala

WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:Chithunzi cha WSD4018DN22

BVDSS:-40V

ID:-18A

RDSON:26m ndi 

Channel:P-channel

Phukusi:Chithunzi cha DFN2X2-6L


Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zolemba Zamalonda

WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD4018DN22 MOSFET ndi -40V, pano ndi -18A, kukana ndi 26mΩ, njira ndi P-channel, ndi phukusi ndi DFN2X2-6L.

Malo ogwiritsira ntchito WINSOK MOSFET

Advanced high cell density Trench Technology, Super Low Gate Charge, Excellent Cdv/dt effect kuchepa Green Chipangizo Chikupezeka, Zida zozindikiritsa nkhope MOSFET, e-fodya MOSFET, zida zazing'ono zapakhomo MOSFET, charger yamagalimoto MOSFET.

WINSOK MOSFET imafanana ndi manambala amtundu wina

AOS MOSFET AON2409,POTENS MOSFET PDB3909L

MOSFET magawo

Chizindikiro

Parameter

Muyezo

Mayunitsi

VDS

Mphamvu yamagetsi ya Drain-Source

-40

V

VGS

Gate-Source Voltage

±20

V

ID@Tc=25℃

Continuous Drain Current, VGS@ -10V1

-18

A

ID@Tc= 70 ℃

Continuous Drain Current, VGS@ -10V1

-14.6

A

IDM

300μS Kukhetsa Kokoka Pakalipano, VGS=-4.5V2

54

A

PD@Tc=25℃

Kuwonongeka kwa Mphamvu Zonse3

19

W

Mtengo wa TSTG

Kusungirako Kutentha Kusiyanasiyana

-55 mpaka 150

TJ

Operating Junction Temperature Range

-55 mpaka 150

Makhalidwe Amagetsi (TJ=25 ℃, pokhapokha ngati tafotokozera mwanjira ina)

Chizindikiro

Parameter

Mikhalidwe

Min.

Lembani.

Max.

Chigawo

BVDSS

Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0v ineD=-250uA

-40

---

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient Malinga ndi 25 ℃, ID=-1mA

---

-0.01

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2 VGS=-10V , ineD=-8.0A

---

26

34

VGS=-4.5V , ineD=-6.0A

---

31

42

VGS (th)

Gate Threshold Voltage VGS=VDS,ineD=-250uA

-1.0

-1.5

-3.0

V

△VGS(th)

VGS(th)Kutentha kwa Coefficient

---

3.13

---

mV/℃

IDSS

Drain-Source Leakage Current VDS=-40V , VGS=0V ,TJ=25℃

---

---

-1

uA

VDS=-40V , VGS=0V ,TJ= 55℃

---

---

-5

Zithunzi za IGSS

Gate-Source Leakage Current VGS=±20V , VDS=0V

---

---

± 100

nA

Qg

Chipata Chokwanira (-4.5V) VDS=-20V , VGS=-10V , ineD=-1.5A

---

27

---

nC

Qgs

Gate-Source Charge

---

2.5

---

Qgd

Kulipira kwa Gate-Drain

---

6.7

---

Td (pa)

Yatsani Kuchedwa Nthawi VDD=-20V , VGS=-10V ,RG=3Ω , RL=10Ω

---

9.8

---

ns

Tr

Nthawi Yokwera

---

11

---

Td (kuchoka)

Nthawi Yochedwa Kuzimitsa

---

54

---

Tf

Nthawi Yogwa

---

7.1

---

Ciss

Input Capacitance VDS=-20V , VGS=0V , f=1MHz

---

1560

---

pF

Koss

Mphamvu Zotulutsa

---

116

---

Crss

Reverse Transfer Capacitance

---

97

---


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