WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD4018DN22 MOSFET ndi -40V, pano ndi -18A, kukana ndi 26mΩ, njira ndi P-channel, ndi phukusi ndi DFN2X2-6L.
Malo ogwiritsira ntchito WINSOK MOSFET
Advanced high cell density Trench Technology, Super Low Gate Charge, Excellent Cdv/dt effect kuchepa Green Chipangizo Chikupezeka, Zida zozindikiritsa nkhope MOSFET, e-fodya MOSFET, zida zazing'ono zapakhomo MOSFET, charger yamagalimoto MOSFET.
WINSOK MOSFET imafanana ndi manambala amtundu wina
AOS MOSFET AON2409,POTENS MOSFET PDB3909L
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi |
| VDS | Mphamvu yamagetsi ya Drain-Source | -40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@Tc=25℃ | Continuous Drain Current, VGS@ -10V1 | -18 | A |
| ID@Tc= 70 ℃ | Continuous Drain Current, VGS@ -10V1 | -14.6 | A |
| IDM | 300μS Kukhetsa Kokoka Pakalipano, VGS=-4.5V2 | 54 | A |
| PD@Tc=25℃ | Kuwonongeka kwa Mphamvu Zonse3 | 19 | W |
| Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 mpaka 150 | ℃ |
Makhalidwe Amagetsi (TJ=25 ℃, pokhapokha ngati tafotokozera mwanjira ina)
| Chizindikiro | Parameter | Zoyenera | Min. | Lembani. | Max. | Chigawo |
| BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0v ineD=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Malinga ndi 25 ℃, ID=-1mA | --- | -0.01 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ineD=-8.0A | --- | 26 | 34 | mΩ |
| VGS=-4.5V , ineD=-6.0A | --- | 31 | 42 | |||
| VGS (th) | Gate Threshold Voltage | VGS=VDS,ineD=-250uA | -1.0 | -1.5 | -3.0 | V |
| △VGS(th) | VGS(th)Kutentha kwa Coefficient | --- | 3.13 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V ,TJ=25℃ | --- | --- | -1 | uA |
| VDS=-40V , VGS=0V ,TJ= 55℃ | --- | --- | -5 | |||
| Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ± 100 | nA |
| Qg | Chipata Chokwanira (-4.5V) | VDS=-20V , VGS=-10V , ineD=-1.5A | --- | 27 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.5 | --- | ||
| Qgd | Kulipira kwa Gate-Drain | --- | 6.7 | --- | ||
| Td (pa) | Yatsani Kuchedwa Nthawi | VDD=-20V , VGS=-10V ,RG=3Ω , RL=10Ω | --- | 9.8 | --- | ns |
| Tr | Nthawi Yokwera | --- | 11 | --- | ||
| Td (kuchoka) | Nthawi Yochedwa Kuzimitsa | --- | 54 | --- | ||
| Tf | Nthawi Yogwa | --- | 7.1 | --- | ||
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | --- | 1560 | --- | pF |
| Koss | Mphamvu Zotulutsa | --- | 116 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 97 | --- |
