WSD4076DN56 N-channel 40V 76A DFN5X6-8 WINSOK MOSFET

mankhwala

WSD4076DN56 N-channel 40V 76A DFN5X6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:Chithunzi cha WSD4076DN56

BVDSS:40v ndi

ID:76A

RDSON:6.9mx 

Channel:N-channel

Phukusi:DFN5X6-8


Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zolemba Zamalonda

WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD4076DN56 MOSFET ndi 40V, pano ndi 76A, kukana ndi 6.9mΩ, njira ndi N-channel, ndi phukusi ndi DFN5X6-8.

Malo ogwiritsira ntchito WINSOK MOSFET

Zida zazing'ono MOSFET, zida zam'manja MOSFET, ma motors MOSFET.

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MOSFET magawo

Chizindikiro

Parameter

Muyezo

Mayunitsi

VDS

Mphamvu yamagetsi ya Drain-Source

40

V

VGS

Gate-Sourndi Voltage

±20

V

ID@TC=25

Continuous Drain Current, VGS@10v

76

A

ID@TC=100

Continuous Drain Current, VGS@10v

33

A

IDM

Pulsed Drain Currenta

125

A

EAS

Single Pulse Avalanche Energyb

31

mJ

IAS

Avalanche Current

31

A

PD@Ta=25

Kuwonongeka kwa Mphamvu Zonse

1.7

W

Mtengo wa TSTG

Kusungirako Kutentha Kusiyanasiyana

-55 mpaka 150

TJ

Operating Junction Temperature Range

-55 mpaka 150

 

Chizindikiro

Parameter

Mikhalidwe

Min.

Lembani.

Max.

Chigawo

BVDSS

Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0v ineD= 250uA

40

---

---

V

BVDSS/△TJ

BVDSSKutentha kwa Coefficient Reference ku 25,ineD=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS = 10V , ID=12A

---

6.9

8.5

mΩ

RDS(ON)

Static Drain-Source On-Resistance2 VGS = 4.5V , ID=10A

---

10

15

VGS (th)

Gate Threshold Voltage VGS=VDS,ineD= 250uA

1.5

1.6

2.5

V

VGS (th)

VGS(th)Kutentha kwa Coefficient

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS= 32V , VGS=0V ,TJ=25

---

---

2

uA

VDS= 32V , VGS=0V ,TJ= 55

---

---

10

Zithunzi za IGSS

Gate-Source Leakage Current VGS=±20v, ndiDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS=5v ineD=20A

---

18

---

S

Rg

Kukaniza Chipata VDS= 0V , VGS=0V , f=1MHz

---

1.7

---

Ω

Qg

Chipata Chokwanira (10V) VDS= 20V , VGS= 4.5V , ineD=12A

---

5.8

---

nC

Qgs

Gate-Source Charge

---

3.0

---

Qgd

Kulipira kwa Gate-Drain

---

1.2

---

Td (pa)

Yatsani Kuchedwa Nthawi VDD= 15V , VGEN=10V , RG=3.3Ω,ineD=1A.

---

12

---

ns

Tr

Nthawi Yokwera

---

5.6

---

Td (kuchoka)

Nthawi Yochedwa Kuzimitsa

---

20

---

Tf

Nthawi Yogwa

---

11

---

Ciss

Input Capacitance VDS= 15V , VGS=0V , f=1MHz

---

680

---

pF

Koss

Mphamvu Zotulutsa

---

185

---

Crss

Reverse Transfer Capacitance

---

38

---


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