WSD4076DN56 N-channel 40V 76A DFN5X6-8 WINSOK MOSFET

mankhwala

WSD4076DN56 N-channel 40V 76A DFN5X6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:Chithunzi cha WSD4076DN56

BVDSS:40v ndi

ID:76A

RDSON:6.9mx 

Channel:N-channel

Phukusi:DFN5X6-8


Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zogulitsa Tags

WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD4076DN56 MOSFET ndi 40V, pano ndi 76A, kukana ndi 6.9mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.

Malo ogwiritsira ntchito WINSOK MOSFET

Zida zazing'ono MOSFET, zida zam'manja MOSFET, ma motors MOSFET.

WINSOK MOSFET imafanana ndi manambala amtundu wina

STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.

PANJIT MOSFET PJQ5442.

POTENS Semiconductor MOSFET PDC496X.

MOSFET magawo

Chizindikiro

Parameter

Muyezo

Mayunitsi

VDS

Mphamvu yamagetsi ya Drain-Source

40

V

VGS

Gate-Sourndi Voltage

±20

V

ID@TC=25

Continuous Drain Current, VGS@10v

76

A

ID@TC=100

Continuous Drain Current, VGS@10v

33

A

IDM

Pulsed Drain Currenta

125

A

EAS

Single Pulse Avalanche Energyb

31

mJ

IAS

Avalanche Current

31

A

PD@Ta=25

Kuwonongeka kwa Mphamvu Zonse

1.7

W

Mtengo wa TSTG

Kusungirako Kutentha Kusiyanasiyana

-55 mpaka 150

TJ

Operating Junction Temperature Range

-55 mpaka 150

 

Chizindikiro

Parameter

Zoyenera

Min.

Lembani.

Max.

Chigawo

BVDSS

Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0v ineD= 250uA

40

---

---

V

BVDSS/△TJ

BVDSSKutentha kwa Coefficient Reference ku 25,ineD=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS = 10V , ID=12A

---

6.9

8.5

mΩ

RDS(ON)

Static Drain-Source On-Resistance2 VGS = 4.5V , ID=10A

---

10

15

VGS (th)

Gate Threshold Voltage VGS=VDS,ineD= 250uA

1.5

1.6

2.5

V

VGS (th)

VGS(th)Kutentha kwa Coefficient

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS= 32V , VGS=0V ,TJ=25

---

---

2

uA

VDS= 32V , VGS=0V ,TJ= 55

---

---

10

Zithunzi za IGSS

Gate-Source Leakage Current VGS=±20v, ndiDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS=5v ineD=20A

---

18

---

S

Rg

Kukaniza Chipata VDS= 0V , VGS=0V , f=1MHz

---

1.7

---

Ω

Qg

Chipata Chokwanira (10V) VDS= 20V , VGS= 4.5V , ineD=12A

---

5.8

---

nC

Qgs

Gate-Source Charge

---

3.0

---

Qgd

Kulipira kwa Gate-Drain

---

1.2

---

Td (pa)

Yatsani Kuchedwa Nthawi VDD= 15V , VGEN=10V , RG=3.3Ω,ineD=1A.

---

12

---

ns

Tr

Nthawi Yokwera

---

5.6

---

Td (kuchoka)

Nthawi Yochedwa Kuzimitsa

---

20

---

Tf

Nthawi Yogwa

---

11

---

Ciss

Input Capacitance VDS= 15V , VGS=0V , f=1MHz

---

680

---

pF

Koss

Mphamvu Zotulutsa

---

185

---

Crss

Reverse Transfer Capacitance

---

38

---


  • Zam'mbuyo:
  • Ena:

  • Lembani uthenga wanu apa ndikutumiza kwa ife