WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

mankhwala

WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:Chithunzi cha WSD4080DN56

BVDSS:40v ndi

ID:85A

RDSON:4.5mΩ 

Channel:N-channel

Phukusi:DFN5X6-8


Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zolemba Zamalonda

WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD4080DN56 MOSFET ndi 40V, pano ndi 85A, kukana ndi 4.5mΩ, njira ndi N-channel, ndi phukusi ndi DFN5X6-8.

Malo ogwiritsira ntchito WINSOK MOSFET

Zida zazing'ono MOSFET, zida zam'manja MOSFET, ma motors MOSFET.

WINSOK MOSFET imafanana ndi manambala amtundu wina

AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.

MOSFET magawo

Chizindikiro

Parameter

Muyezo

Mayunitsi

VDS

Mphamvu yamagetsi ya Drain-Source

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @10v1

85

A

ID@TC=100℃

Continuous Drain Current, VGS @10v1

58

A

IDM

Pulsed Drain Current2

100

A

EAS

Single Pulse Avalanche Energy3

110.5

mJ

IAS

Avalanche Current

47

A

PDTC=25℃

Kuwonongeka kwa Mphamvu Zonse4

52.1

W

Mtengo wa TSTG

Kusungirako Kutentha Kusiyanasiyana

-55 mpaka 150

TJ

Operating Junction Temperature Range

-55 mpaka 150

RJA

Thermal Resistance Junction-Ambient1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

2.4

℃/W

 

Chizindikiro

Parameter

Mikhalidwe

Min.

Lembani.

Max.

Chigawo

BVDSS

Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0V , ID=250uA

40

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=10A

---

4.5

6.5

VGS=4.5V , ID=5A

---

6.4

8.5

VGS (th)

Gate Threshold Voltage VGS=VDS , ID =250uA

1.0

---

2.5

V

IDSS

Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=55℃

---

---

5

Zithunzi za IGSS

Gate-Source Leakage Current VGS=±20V , VDS=0V

---

---

± 100

nA

gfs

Forward Transconductance VDS=10V , ID=5A

---

27

---

S

Qg

Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=10A

---

20

---

nC

Qgs

Gate-Source Charge

---

5.8

---

Qgd

Kulipira kwa Gate-Drain

---

9.5

---

Td (pa)

Yatsani Kuchedwa Nthawi VDD=15V , VGS=10V RG=3.3ΩID=1A

---

15.2

---

ns

Tr

Nthawi Yokwera

---

8.8

---

Td (kuchoka)

Nthawi Yochedwa Kuzimitsa

---

74

---

Tf

Nthawi Yogwa

---

7

---

Ciss

Input Capacitance VDS=15V , VGS=0V , f=1MHz

---

2354

---

pF

Koss

Mphamvu Zotulutsa

---

215

---

Crss

Reverse Transfer Capacitance

---

175

---

IS

Continuous Source Current1, 5 VG=VD= 0V , Mphamvu Pakalipano

---

---

70

A

VSD

Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃

---

---

1

V


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