WSD4280DN22 Wapawiri P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET

mankhwala

WSD4280DN22 Wapawiri P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:Chithunzi cha WSD4280DN22

BVDSS:-15V

ID:-4.6A

RDSON:47m pa 

Channel:Dual P-channel

Phukusi:Chithunzi cha DFN2X2-6L


Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zolemba Zamalonda

WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD4280DN22 MOSFET ndi -15V, pano ndi -4.6A, kukana ndi 47mΩ, njira ndi Dual P-channel, ndi phukusi ndi DFN2X2-6L.

Malo ogwiritsira ntchito WINSOK MOSFET

Bidirectional kutsekereza switch; DC-DC conversion applications; Li-battery charger; E-fodya MOSFET, wireless charger MOSFET, car charger MOSFET, controller MOSFET, digito product MOSFET, zing'onozing'ono zapakhomo MOSFET, ogula zamagetsi MOSFET.

WINSOK MOSFET imafanana ndi manambala amtundu wina

PANJIT MOSFET PJQ2815

MOSFET magawo

Chizindikiro

Parameter

Muyezo

Mayunitsi

VDS

Mphamvu yamagetsi ya Drain-Source

-15

V

VGS

Gate-Source Voltage

±8

V

ID@Tc=25℃

Continuous Drain Current, VGS= -4.5V1 

-4.6

A

IDM

300μS Pulsed Drain Current, (VGS=-4.5V)

-15

A

PD 

Kuwonongeka kwa Mphamvu Kutsika pamwamba pa TA = 25°C (Dziwani 2)

1.9

W

TSTG, TJ 

Kusungirako Kutentha Kusiyanasiyana

-55 mpaka 150

RJA

Thermal Resistance Junction-yozungulira1

65

℃/W

RθJC

Thermal Resistance Junction-Case1

50

℃/W

Makhalidwe Amagetsi (TJ=25 ℃, pokhapokha ngati tafotokozera mwanjira ina)

Chizindikiro

Parameter

Mikhalidwe

Min.

Lembani.

Max.

Chigawo

BVDSS 

Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0v ineD=-250uA

-15

---

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient Malinga ndi 25 ℃, ID=-1mA

---

-0.01

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2  VGS=-4.5V , ineD=-1A

---

47

61

VGS=-2.5V , ineD=-1A

---

61

80

VGS=-1.8V , ineD=-1A

---

90

150

VGS (th)

Gate Threshold Voltage VGS=VDS,ndiD=-250uA

-0.4

-0.62

-1.2

V

△VGS(th) 

VGS(th)Kutentha kwa Coefficient

---

3.13

---

mV/℃

IDSS

Drain-Source Leakage Current VDS=-10V , VGS=0V ,TJ=25℃

---

---

-1

uA

VDS=-10V , VGS=0V ,TJ= 55℃

---

---

-5

Zithunzi za IGSS

Gate-Source Leakage Current VGS=±12V , VDS= 0V

---

---

± 100

nA

gfs

Forward Transconductance VDS=-5V , ineD=-1A

---

10

---

S

Rg 

Kukaniza Chipata VDS= 0V , VGS=0V , f=1MHz

---

2

---

Ω

Qg 

Chipata Chokwanira (-4.5V)

VDS=-10V , VGS=-4.5V , ineD=-4.6A

---

9.5

---

nC

Qgs 

Gate-Source Charge

---

1.4

---

Qgd 

Kulipira kwa Gate-Drain

---

2.3

---

Td (pa)

Yatsani Kuchedwa Nthawi VDD=-10V ,VGS=-4.5V , RG=1Ω

ID=-3.9A,

---

15

---

ns

Tr 

Nthawi Yokwera

---

16

---

Td (kuchoka)

Nthawi Yochedwa Kuzimitsa

---

30

---

Tf 

Nthawi Yogwa

---

10

---

Ciss 

Input Capacitance VDS=-10V , VGS=0V , f=1MHz

---

781

---

pF

Koss

Mphamvu Zotulutsa

---

98

---

Crss 

Reverse Transfer Capacitance

---

96

---


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