Chithunzi cha WSD45N10GDN56 N-channel 100V 45A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD45N10GDN56 MOSFET ndi 100V, pano ndi 45A, kukana ndi 14.5mΩ, njira ndi N-channel, ndi phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
E-fodya MOSFET, MOSFET charging opanda zingwe, ma motors MOSFET, drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu za digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.
WINSOK MOSFET imafanana ndi manambala amtundu wina
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi |
| VDS | Mphamvu yamagetsi ya Drain-Source | 100 | V |
| VGS | Gate-Sourndi Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS@10v | 45 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS@10v | 33 | A |
| ID@TA=25℃ | Continuous Drain Current, VGS@10v | 12 | A |
| ID@TA= 70℃ | Continuous Drain Current, VGS@10v | 9.6 | A |
| IDMa | Pulsed Drain Current | 130 | A |
| EASb | Single Pulse Avalanche Energy | 169 | mJ |
| IASb | Avalanche Current | 26 | A |
| PD@TC=25℃ | Kuwonongeka kwa Mphamvu Zonse | 95 | W |
| PD@TA=25℃ | Kuwonongeka kwa Mphamvu Zonse | 5.0 | W |
| Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 mpaka 150 | ℃ |
| Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo |
| BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0v ineD= 250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference ku 25℃,ineD=1mA | --- | 0.0 | --- | V/℃ |
| RDS(ON)d | Static Drain-Source On-Resistance2 | VGS=10v ineD= 26A | --- | 14.5 | 17.5 | mΩ |
| VGS (th) | Gate Threshold Voltage | VGS=VDS,ineD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Kutentha kwa Coefficient | --- | -5 | mV/℃ | ||
| IDSS | Drain-Source Leakage Current | VDS= 80V , VGS=0V ,TJ=25℃ | --- | - | 1 | uA |
| VDS= 80V , VGS=0V ,TJ= 55℃ | --- | - | 30 | |||
| Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20v, ndiDS=0V | --- | - | ±100 | nA |
| Rge | Kukaniza Chipata | VDS= 0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Chipata Chokwanira (10V) | VDS= 50V , VGS=10v ineD= 26A | --- | 42 | 59 | nC |
| Qgse | Gate-Source Charge | --- | 12 | -- | ||
| Qgde | Kulipira kwa Gate-Drain | --- | 12 | --- | ||
| Td (pa)e | Yatsani Kuchedwa Nthawi | VDD= 30V , VGEN=10V , RG=6Ω ID=1A,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Nthawi Yokwera | --- | 9 | 17 | ||
| Td (kuchoka)e | Nthawi Yochedwa Kuzimitsa | --- | 36 | 65 | ||
| Tfe | Nthawi Yogwa | --- | 22 | 40 | ||
| Cisse | Input Capacitance | VDS= 30V , VGS=0V , f=1MHz | --- | 1800 | --- | pF |
| Kose | Mphamvu Zotulutsa | --- | 215 | --- | ||
| Crsse | Reverse Transfer Capacitance | --- | 42 | --- |
