WSD6040DN56 N-channel 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD6040DN56 MOSFET ndi 60V, pano ndi 36A, kukana ndi 14mΩ, njira ndi N-channel, ndi phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
E-fodya MOSFET, MOSFET charging opanda zingwe, ma motors MOSFET, drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu za digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.
WINSOK MOSFET imafanana ndi manambala amtundu wina
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi | ||
| VDS | Mphamvu yamagetsi ya Drain-Source | 60 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID | Kukhetsa Kopitirizabe Panopa | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Kukhetsa Kopitirizabe Panopa | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | Pulsed Drain Current | TC=25°C | 140 | A | |
| PD | Maximum Power Dissipation | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Maximum Power Dissipation | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | Avalanche Current, Single pulse | L=0.5mH | 16 | A | |
| EASc | Single Pulse Avalanche Energy | L=0.5mH | 64 | mJ | |
| IS | Diode Continuous Forward Current | TC=25°C | 18 | A | |
| TJ | Maximum Junction Kutentha | 150 | ℃ | ||
| Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ | ||
| RθJAb | Thermal Resistance Junction kuti ikhale yozungulira | Khazikika | 60 | ℃/W | |
| RθJC | Thermal Resistance-Junction to Case | Khazikika | 3.3 | ℃/W | |
| Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo | |
| Zokhazikika | |||||||
| V(BR)DSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Panopa | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| Zithunzi za IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ± 100 | nA | |||
| Pa Makhalidwe | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS (yayatsidwa)d | Drain-Source On-state Resistance | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Kusintha | |||||||
| Qg | Total Gate Charge | VDS=30V VGS = 10V ID=25A | 42 | nC | |||
| Qgs | Kulipira kwa Gate-Sour | 6.4 | nC | ||||
| Qgd | Kulipira kwa Gate-Drain | 9.6 | nC | ||||
| td (pa) | Yatsani Kuchedwa Nthawi | VGEN = 10V VDD=30V ID=1A RG = 6 Ω RL = 30Ω | 17 | ns | |||
| tr | Yatsani Nthawi Yokwera | 9 | ns | ||||
| td (kuchotsa) | Kuyimitsa Kuchedwa Nthawi | 58 | ns | ||||
| tf | Nthawi Yoyimitsa Kugwa | 14 | ns | ||||
| Rg | Kukaniza gat | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Zamphamvu | |||||||
| Ciss | Mu Capacitance | VGS = 0V VDS=30V f=1MHz | 2100 | pF | |||
| Koss | Out Capacitance | 140 | pF | ||||
| Crss | Reverse Transfer Capacitance | 100 | pF | ||||
| Makhalidwe a Drain-Source Diode ndi Mayeso Opambana | |||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 18 | A | |||
| ISM | Pulsed Source Current3 | 35 | A | ||||
| VSDd | Diode Forward Voltage | ISD = 20A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Reverse Recovery Time | ISD=25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Charge | 33 | nC | ||||
