WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:Chithunzi cha WSD6060DN56

BVDSS:60v ndi

ID:65A

RDSON:7.5mΩ

Channel:N-channel

Phukusi:DFN5X6-8

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WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD6060DN56 MOSFET ndi 60V, pano ndi 65A, kukana ndi 7.5mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.

Malo ogwiritsira ntchito WINSOK MOSFET

E-fodya MOSFET, MOSFET chotcha opanda zingwe, ma motors MOSFET, drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu za digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.

WINSOK MOSFET imafanana ndi manambala amtundu wina

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

MOSFET magawo

Chizindikiro	Parameter		Muyezo	Chigawo
Mavoti Wamba
VDSS	Mphamvu yamagetsi ya Drain-Source		60	V
Zithunzi za VGSS	Gate-Source Voltage		±20	V
T_J	Maximum Junction Kutentha		150	°C
Mtengo wa TSTG	Kusungirako Kutentha Kusiyanasiyana		-55 mpaka 150	°C
I_S	Diode Continuous Forward Current	T_c=25°C	30	A
ID	Kukhetsa Kopitirizabe Panopa	T_c=25°C	65	A
ID	Kukhetsa Kopitirizabe Panopa	T_c=70°C	42	A
ine DM b	Pulse Drain Current Tested	T_c=25°C	250	A
P_D	Maximum Power Dissipation	T_c=25°C	62.5	W
P_D	Maximum Power Dissipation	T_C=70°C	38	W
R_qJL	Thermal Resistance-Junction to lead	Khazikika	2.1	°C/W
RqJA	Thermal Resistance-Junction to Ambient	t £ 10s	45	°C/W
RqJA	Thermal Resistance-Junction to Ambient	Khazikika^b	50	°C/W
NDI AS^d	Avalanche Current, Single pulse	L=0.5mH	18	A
E AS d	Avalanche Energy, Single pulse	L=0.5mH	81	mJ

Chizindikiro	Parameter	Zoyeserera		Min.	Lembani.	Max.	Chigawo
Makhalidwe Okhazikika
BV_DSS	Kutaya-Magwero Kuwonongeka kwa Voltage	V_GS=0v ine_DS=250mA		60	-	-	V
IDSS	Zero Gate Voltage Drain Panopa	V_DS= 48V, V_GS=0V		-	-	1	mA
IDSS	Zero Gate Voltage Drain Panopa						mA
			T_J=85°C	-	-	30
VGS (th)	Gate Threshold Voltage	V_DS=V_GS,ine_DS=250mA		1.2	1.5	2.5	V
Zithunzi za IGSS	Gate Leakage Current	V_GS=±20V,V_DS=0V		-	-	± 100	nA
R DS(ON) 3	Drain-Source On-state Resistance	V_GS=10v ine_DS=20A		-	7.5	10	m W
R DS(ON) 3	Drain-Source On-state Resistance	V_GS= 4.5V, ine_DS=15 A		-	10	15	m W
Makhalidwe a Diode
V SD	Diode Forward Voltage	I_SD=1A, V_GS=0V		-	0.75	1.2	V
t_rr	Reverse Recovery Time	I_SD=20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Reverse Recovery Charge	I_SD=20A, dl_SD/dt=100A/µs		-	36	-	nC
Makhalidwe Amphamvu^{3, 4}
R_G	Kukaniza Chipata	V_GS=0V,V_DS=0V,F=1MHz		-	1.5	-	W
C_iss	Input Capacitance	V_GS=0V, V_DS= 30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Mphamvu Zotulutsa			-	270	-
C_rss	Reverse Transfer Capacitance			-	40	-
td(ON)	Yatsani Kuchedwa Nthawi	VDD=30V, IDS=1A, VGEN = 10V, RG = 6Ω.		-	15	-	ns
t_r	Yatsani Nthawi Yokwera			-	6	-
td (KUZImitsa)	Kuyimitsa Kuchedwa Nthawi			-	33	-
t_f	Nthawi Yoyimitsa Kugwa			-	30	-
Makhalidwe a Gate Charge ^{3, 4}
Q_g	Total Gate Charge	V_DS= 30V, V_GS= 4.5V, ine_DS=20A		-	13	-	nC
Q_g	Total Gate Charge	V_DS= 30V, V_GS=10V, I_DS=20A		-	27	-
Q_gth	Threshold Gate Charge			-	4.1	-
Q_gs	Gate-Source Charge			-	5	-
Q_gd	Kulipira kwa Gate-Drain			-	4.2	-