WSD6070DN56 N-channel 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD6070DN56 MOSFET ndi 60V, pano ndi 80A, kukana ndi 7.3mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
E-fodya MOSFET, MOSFET chotcha opanda zingwe, ma motors MOSFET, drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu za digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.
WINSOK MOSFET imafanana ndi manambala amtundu wina
POTENS Semiconductor MOSFET PDC696X.
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi |
| VDS | Mphamvu yamagetsi ya Drain-Source | 60 | V |
| VGS | Gate-Sourndi Voltage | ±20 | V |
| TJ | Maximum Junction Kutentha | 150 | °C |
| ID | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | °C |
| IS | Diode Continuous Forward Current, TC=25°C | 80 | A |
| ID | Continuous Drain Current, VGS=10V,TC=25°C | 80 | A |
| Continuous Drain Current, VGS=10V,TC=100°C | 66 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 300 | A |
| PD | Maximum Power Dissipation, TC=25°C | 150 | W |
| Maximum Power Dissipation, TC=100°C | 75 | W | |
| RθJA | Thermal Resistance-Junction to Ambient ,t =10s ̀ | 50 | °C/W |
| Thermal Resistance-Junction to Ambient, Steady State | 62.5 | °C/W | |
| RqJC | Thermal Resistance-Junction to Case | 1 | °C/W |
| IAS | Avalanche Current, Single pulse,L=0.5mH | 30 | A |
| EAS | Avalanche Energy, Single pulse, L=0.5mH | 225 | mJ |
| Chizindikiro | Parameter | Zoyenera | Min. | Lembani. | Max. | Chigawo |
| BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0v ineD= 250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKutentha kwa Coefficient | Reference ku 25℃,ineD=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS = 10V , ID= 40A | --- | 7.0 | 9.0 | mΩ |
| VGS (th) | Gate Threshold Voltage | VGS=VDS,ineD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (th) | VGS(th)Kutentha kwa Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS= 48V , VGS=0V ,TJ=25℃ | --- | --- | 2 | uA |
| VDS= 48V , VGS=0V ,TJ= 55℃ | --- | --- | 10 | |||
| Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20v, ndiDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5v ineD=20A | --- | 50 | --- | S |
| Rg | Kukaniza Chipata | VDS= 0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Chipata Chokwanira (10V) | VDS= 30V , VGS=10v ineD= 40A | --- | 48 | --- | nC |
| Qgs | Gate-Source Charge | --- | 17 | --- | ||
| Qgd | Kulipira kwa Gate-Drain | --- | 12 | --- | ||
| Td (pa) | Yatsani Kuchedwa Nthawi | VDD= 30V , VGEN=10V , RG=1Ω,ineD=1A ,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Nthawi Yokwera | --- | 10 | --- | ||
| Td (kuchoka) | Nthawi Yochedwa Kuzimitsa | --- | 40 | --- | ||
| Tf | Nthawi Yogwa | --- | 35 | --- | ||
| Ciss | Input Capacitance | VDS= 30V , VGS=0V , f=1MHz | --- | 2680 | --- | pF |
| Koss | Mphamvu Zotulutsa | --- | 386 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 160 | --- |
