WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD60N10GDN56 MOSFET ndi 100V, pano ndi 60A, kukana ndi 8.5mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
E-fodya MOSFET, MOSFET charging opanda zingwe, ma motors MOSFET, drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu za digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.
Magawo ogwiritsira ntchito MOSFETWINSOK MOSFET amafanana ndi manambala amtundu wina
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINENS3BROSCONFE63MOSFETNSHIN39MOSFET19 PH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor Chithunzi cha MOSFET PDC92X
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi |
| VDS | Mphamvu yamagetsi ya Drain-Source | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Kukhetsa Kopitirizabe Panopa | 60 | A |
| IDP | Pulsed Drain Current | 210 | A |
| EAS | Avalanche Energy, Single pulse | 100 | mJ |
| PD@TC=25℃ | Kuwonongeka kwa Mphamvu Zonse | 125 | W |
| Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 mpaka 150 | ℃ |
| Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo |
| BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0v ineD= 250uA | 100 | --- | --- | V |
| Static Drain-Source On-Resistance | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS (th) | Gate Threshold Voltage | VGS=VDS,ineD= 250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS= 80V , VGS=0V ,TJ=25℃ | --- | --- | 1 | uA |
| Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ± 100 | nA |
| Qg | Chipata Chokwanira (10V) | VDS= 50V , VGS=10v ineD= 25A | --- | 49.9 | --- | nC |
| Qgs | Gate-Source Charge | --- | 6.5 | --- | ||
| Qgd | Kulipira kwa Gate-Drain | --- | 12.4 | --- | ||
| Td (pa) | Yatsani Kuchedwa Nthawi | VDD= 50V , VGS=10V ,RG=2.2Ω, ineD= 25A | --- | 20.6 | --- | ns |
| Tr | Nthawi Yokwera | --- | 5 | --- | ||
| Td (kuchoka) | Nthawi Yochedwa Kuzimitsa | --- | 51.8 | --- | ||
| Tf | Nthawi Yogwa | --- | 9 | --- | ||
| Ciss | Input Capacitance | VDS= 50V , VGS=0V , f=1MHz | --- | 2604 | --- | pF |
| Koss | Mphamvu Zotulutsa | --- | 362 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 6.5 | --- | ||
| IS | Continuous Source Current | VG=VD= 0V , Mphamvu Pakalipano | --- | --- | 60 | A |
| ISP | Pulsed Source Current | --- | --- | 210 | A | |
| VSD | Diode Forward Voltage | VGS=0v ineS=12A ,TJ=25℃ | --- | --- | 1.3 | V |
| trr | Reverse Recovery Time | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 106.1 | --- | nC |
