Chithunzi cha WSD60N12GDN56 N-channel 120V 70A DFN5X6-8 WINSOK MOSFET

mankhwala

Chithunzi cha WSD60N12GDN56 N-channel 120V 70A DFN5X6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:Chithunzi cha WSD60N12GDN56

BVDSS:120V

ID:70A

RDSON:10mΩ pa

Channel:N-channel

Phukusi:DFN5X6-8


Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zolemba Zamalonda

WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD60N12GDN56 MOSFET ndi 120V, pano ndi 70A, kukana ndi 10mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.

Malo ogwiritsira ntchito WINSOK MOSFET

Zida zamankhwala MOSFET, drones MOSFET, PD magetsi MOSFET, LED magetsi MOSFET, mafakitale zida MOSFET.

Magawo ogwiritsira ntchito MOSFETWINSOK MOSFET amafanana ndi manambala amtundu wina

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.

MOSFET magawo

Chizindikiro

Parameter

Muyezo

Mayunitsi

VDS

Mphamvu yamagetsi ya Drain-Source

120

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Kukhetsa Kopitirizabe Panopa

70

A

IDP

Pulsed Drain Current

150

A

EAS

Avalanche Energy, Single pulse

53.8

mJ

PD@TC=25℃

Kuwonongeka kwa Mphamvu Zonse

140

W

Mtengo wa TSTG

Kusungirako Kutentha Kusiyanasiyana

-55 mpaka 150

TJ 

Operating Junction Temperature Range

-55 mpaka 150

 

Chizindikiro

Parameter

Mikhalidwe

Min.

Lembani.

Max.

Chigawo

BVDSS 

Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0v ineD= 250uA

120

---

---

V

  Static Drain-Source On-Resistance VGS=10V,ID=10A.

---

10

15

RDS(ON)

VGS=4.5V,ID=10A.

---

18

25

VGS (th)

Gate Threshold Voltage VGS=VDS,ineD= 250uA

1.2

---

2.5

V

IDSS

Drain-Source Leakage Current VDS= 80V , VGS=0V ,TJ=25℃

---

---

1

uA

Zithunzi za IGSS

Gate-Source Leakage Current VGS=±20V , VDS=0V

---

---

± 100

nA

Qg 

Chipata Chokwanira (10V) VDS= 50V , VGS=10v ineD= 25A

---

33

---

nC

Qgs 

Gate-Source Charge

---

5.6

---

Qgd 

Kulipira kwa Gate-Drain

---

7.2

---

Td (pa)

Yatsani Kuchedwa Nthawi VDD= 50V , VGS=10V ,

RG=2 Ω, ineD= 25A

---

22

---

ns

Tr 

Nthawi Yokwera

---

10

---

Td (kuchoka)

Nthawi Yochedwa Kuzimitsa

---

85

---

Tf 

Nthawi Yogwa

---

112

---

Ciss 

Input Capacitance VDS= 50V , VGS=0V , f=1MHz

---

2640

---

pF

Koss

Mphamvu Zotulutsa

---

330

---

Crss 

Reverse Transfer Capacitance

---

11

---

IS 

Continuous Source Current VG=VD= 0V , Mphamvu Pakalipano

---

---

50

A

ISP

Pulsed Source Current

---

---

150

A

VSD

Diode Forward Voltage VGS=0v ineS=12A ,TJ=25℃

---

---

1.3

V

trr 

Reverse Recovery Time IF=25A,dI/dt=100A/µs,TJ=25℃

---

62

---

nS

Qrr 

Reverse Recovery Charge

---

135

---

nC

 


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