WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD75100DN56 MOSFET ndi 75V, pano ndi 100A, kukana ndi 5.3mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
E-fodya MOSFET, opanda zingwe charging MOSFET, drones MOSFET, chithandizo chamankhwala MOSFET, ma charger agalimoto MOSFET, owongolera MOSFET, zinthu za digito MOSFET, zida zazing'ono zapakhomo MOSFET, zida zamagetsi zogula MOSFET.
WINSOK MOSFET imafanana ndi manambala amtundu wina
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7G3NSFETNS3PONEG7BSNS3G,P X.
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi |
| VDS | Mphamvu yamagetsi ya Drain-Source | 75 | V |
| VGS | Gate-Sourndi Voltage | ±25 | V |
| TJ | Maximum Junction Kutentha | 150 | °C |
| ID | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | °C |
| IS | Diode Continuous Forward Current, TC=25°C | 50 | A |
| ID | Continuous Drain Current, VGS=10V,TC=25°C | 100 | A |
| Continuous Drain Current, VGS=10V,TC=100°C | 73 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 400 | A |
| PD | Maximum Power Dissipation, TC=25°C | 155 | W |
| Maximum Power Dissipation, TC=100°C | 62 | W | |
| RθJA | Thermal Resistance-Junction to Ambient ,t =10s ̀ | 20 | °C |
| Thermal Resistance-Junction to Ambient, Steady State | 60 | °C | |
| RqJC | Thermal Resistance-Junction to Case | 0.8 | °C |
| IAS | Avalanche Current, Single pulse,L=0.5mH | 30 | A |
| EAS | Avalanche Energy, Single pulse, L=0.5mH | 225 | mJ |
| Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo |
| BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0v ineD= 250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSKutentha kwa Coefficient | Reference ku 25℃,ineD=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS = 10V , ID= 25A | --- | 5.3 | 6.4 | mΩ |
| VGS (th) | Gate Threshold Voltage | VGS=VDS,ineD= 250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Kutentha kwa Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS= 48V , VGS=0V ,TJ=25℃ | --- | --- | 2 | uA |
| VDS= 48V , VGS=0V ,TJ= 55℃ | --- | --- | 10 | |||
| Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20v, ndiDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5v ineD=20A | --- | 50 | --- | S |
| Rg | Kukaniza Chipata | VDS= 0V , VGS=0V , f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Chipata Chokwanira (10V) | VDS= 20V , VGS=10v ineD= 40A | --- | 65 | 85 | nC |
| Qgs | Gate-Source Charge | --- | 20 | --- | ||
| Qgd | Kulipira kwa Gate-Drain | --- | 17 | --- | ||
| Td (pa) | Yatsani Kuchedwa Nthawi | VDD= 30V , VGEN=10V , RG=1Ω,ineD=1A ,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Nthawi Yokwera | --- | 14 | 26 | ||
| Td (kuchoka) | Nthawi Yochedwa Kuzimitsa | --- | 60 | 108 | ||
| Tf | Nthawi Yogwa | --- | 37 | 67 | ||
| Ciss | Input Capacitance | VDS= 20V , VGS=0V , f=1MHz | 3450 | 3500 | 4550 | pF |
| Koss | Mphamvu Zotulutsa | 245 | 395 | 652 | ||
| Crss | Reverse Transfer Capacitance | 100 | 195 | 250 |
