Chithunzi cha WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET mwachidule mankhwala
Magetsi a WSD75N12GDN56 MOSFET ndi 120V, pano ndi 75A, kukana ndi 6mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.
Malo ogwiritsira ntchito WINSOK MOSFET
Zida zamankhwala MOSFET, drones MOSFET, PD magetsi MOSFET, LED magetsi MOSFET, mafakitale zida MOSFET.
Magawo ogwiritsira ntchito MOSFETWINSOK MOSFET amafanana ndi manambala amtundu wina
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET magawo
| Chizindikiro | Parameter | Muyezo | Mayunitsi |
| VDSS | Kukhetsa-to-Source Voltage | 120 | V |
| VGS | Magetsi a Gate-to-Source | ±20 | V |
| ID | 1 Kukhetsa Kopitirira Pano (Tc=25℃) | 75 | A |
| ID | 1 Kukhetsa Kopitirira Pano (Tc=70 ℃) | 70 | A |
| IDM | Pulsed Drain Current | 320 | A |
| IAR | Single pulse avalanche current | 40 | A |
| EASA | Single pulse avalanche energy | 240 | mJ |
| PD | Kutaya Mphamvu | 125 | W |
| TJ, gawo | Njira Yogwirira Ntchito ndi Kutentha Kosungirako | -55 mpaka 150 | ℃ |
| TL | Kutentha Kwambiri kwa Soldering | 260 | ℃ |
| RθJC | Kukaniza Kutentha, Junction-to-Case | 1.0 | ℃/W |
| RJA | Kukaniza kwa Thermal, Junction-to-Ambient | 50 | ℃/W |
| Chizindikiro | Parameter | Zoyeserera | Min. | Lembani. | Max. | Mayunitsi |
| VDSS | Kukhetsa ku Source Breakdown Voltage | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Yatsani ku Source Leakage Current | VDS = 120V, VGS = 0V | -- | -- | 1 | µA |
| IGSS(F) | Gate to Source Forward Leakage | VGS =+20V | -- | -- | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS =-20V | -- | -- | -100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON)1 | Drain-to-Source On-Resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Forward Transconductance | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Input Capacitance | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| Koss | Mphamvu Zotulutsa | -- | 429 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 17 | -- | pF | |
| Rg | Kukaniza zipata | -- | 2.5 | -- | Ω | |
| td(ON) | Yatsani Kuchedwa Nthawi | ID = 20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Nthawi Yokwera | -- | 11 | -- | ns | |
| td(WOZIMA) | Nthawi Yochedwa Kuzimitsa | -- | 55 | -- | ns | |
| tf | Nthawi Yogwa | -- | 28 | -- | ns | |
| Qg | Total Gate Charge | VGS = 0 ~ 10V VDS = 50VID = 20A | -- | 61.4 | -- | nC |
| Qgs | Gate Source Charge | -- | 17.4 | -- | nC | |
| Qgd | Gate Drain Charge | -- | 14.1 | -- | nC | |
| IS | Diode Forward Current | TC =25 °C | -- | -- | 100 | A |
| ISM | Diode Pulse Current | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Reverse Recovery nthawi | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 250 | -- | nC |
