WSD80100DN56 N-channel 80V 100A DFN5X6-8 WINSOK MOSFET

mankhwala

WSD80100DN56 N-channel 80V 100A DFN5X6-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala yagawo:WSD80100DN56

BVDSS:80v ndi

ID:100A

RDSON:6.1mΩ

Channel:N-channel

Phukusi:DFN5X6-8


Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zolemba Zamalonda

WINSOK MOSFET mwachidule mankhwala

Magetsi a WSD80100DN56 MOSFET ndi 80V, pano ndi 100A, kukana ndi 6.1mΩ, njira ndi N-channel, ndipo phukusi ndi DFN5X6-8.

Malo ogwiritsira ntchito WINSOK MOSFET

Drones MOSFET, motors MOSFET, zamagetsi zamagalimoto MOSFET, zida zazikulu MOSFET.

WINSOK MOSFET imafanana ndi manambala amtundu wina

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.

MOSFET magawo

Chizindikiro

Parameter

Muyezo

Mayunitsi

VDS

Mphamvu yamagetsi ya Drain-Source

80

V

VGS

Gate-Sourndi Voltage

±20

V

TJ

Maximum Junction Kutentha

150

°C

ID

Kusungirako Kutentha Kusiyanasiyana

-55 mpaka 150

°C

ID

Continuous Drain Current, VGS=10V,TC=25°C

100

A

Continuous Drain Current, VGS=10V,TC=100°C

80

A

IDM

Pulsed Drain Current, TC=25°C

380

A

PD

Maximum Power Dissipation, TC=25°C

200

W

RqJC

Thermal Resistance-Junction to Case

0.8

°C

EAS

Avalanche Energy, Single pulse, L=0.5mH

800

mJ

 

Chizindikiro

Parameter

Mikhalidwe

Min.

Lembani.

Max.

Chigawo

BVDSS

Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0v ineD= 250uA

80

---

---

V

BVDSS/△TJ

BVDSSKutentha kwa Coefficient Reference ku 25,ineD=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS = 10V , ID= 40A

---

6.1

8.5

mΩ

VGS (th)

Gate Threshold Voltage VGS=VDS,ineD= 250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Kutentha kwa Coefficient

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS= 48V , VGS=0V ,TJ=25

---

---

2

uA

VDS= 48V , VGS=0V ,TJ= 55

---

---

10

Zithunzi za IGSS

Gate-Source Leakage Current VGS=±20v, ndiDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS=5v ineD=20A

80

---

---

S

Qg

Chipata Chokwanira (10V) VDS= 30V , VGS=10v ineD=30A

---

125

---

nC

Qgs

Gate-Source Charge

---

24

---

Qgd

Kulipira kwa Gate-Drain

---

30

---

Td (pa)

Yatsani Kuchedwa Nthawi VDD= 30V , VGS=10V ,

RG=2.5Ω,ineD=2A ,RL=15Ω.

---

20

---

ns

Tr

Nthawi Yokwera

---

19

---

Td (kuchoka)

Nthawi Yochedwa Kuzimitsa

---

70

---

Tf

Nthawi Yogwa

---

30

---

Ciss

Input Capacitance VDS= 25V , VGS=0V , f=1MHz

---

4900 pa

---

pF

Koss

Mphamvu Zotulutsa

---

410

---

Crss

Reverse Transfer Capacitance

---

315

---


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