WSM320N04G N-channel 40V 320A TOLL-8L WINSOK MOSFET

Kufotokozera mwachidule:

Nambala Yachitsanzo:Chithunzi cha WSM320N04G

BVDSS:40v ndi

RDSON:1.2mΩ

ID:320A

Channel:N-channel

Phukusi:KULIMBITSA-8L

Chilimwe Chakugulitsa:WSM320N04G MOSFET ili ndi voteji ya 40V, yapano ya 320A, kukana kwa 1.2mΩ, njira ya N, ndi phukusi la TOLL-8L.

Mapulogalamu:Ndudu zamagetsi, kulipiritsa opanda zingwe, ma drones, zachipatala, kulipiritsa galimoto, zowongolera, zinthu za digito, zida zazing'ono zapakhomo, zamagetsi ogula.

Titumizireni imelo PDF

Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zolemba Zamalonda

Kufotokozera Kwambiri

WSM320N04G ndi MOSFET yogwira ntchito kwambiri yomwe imagwiritsa ntchito mapangidwe a ngalande ndipo imakhala ndi kachulukidwe kakang'ono kwambiri. Ili ndi mtengo wabwino kwambiri wa RDSON ndi chipata ndipo ndiyoyenera kugwiritsa ntchito ma synchronous buck converter. WSM320N04G imakwaniritsa zofunikira za RoHS ndi Green Product ndipo imatsimikiziridwa kukhala ndi 100% EAS ndi kudalirika kwathunthu kwa ntchito.

Mawonekedwe

Ukadaulo wapamwamba kwambiri wama cell density Trench, pomwe ulinso ndi chipata chotsika kuti chigwire bwino ntchito. Kuphatikiza apo, ili ndi kutsika kwabwino kwambiri kwa CdV/dt, 100% EAS Guarantee ndi njira yabwinoko.

Mapulogalamu

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Power Tool Application, ndudu zamagetsi, kulipira opanda zingwe, ma drones, zachipatala, kulipiritsa magalimoto, owongolera, zinthu zama digito, zida zazing'ono zapakhomo, ndi magetsi ogula.

Zofunikira zofunika

Chizindikiro	Parameter	Muyezo	Mayunitsi
VDS	Mphamvu yamagetsi ya Drain-Source	40	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Kukhetsa Kopitirira Pano, VGS @ 10V1,7	320	A
ID@TC=100℃	Kukhetsa Kopitirira Pano, VGS @ 10V1,7	192	A
IDM	Pulsed Drain Current2	900	A
EAS	Single Pulse Avalanche Energy3	980	mJ
IAS	Avalanche Current	70	A
PD@TC=25℃	Kuwonongeka kwa Mphamvu Zonse4	250	W
Mtengo wa TSTG	Kusungirako Kutentha Kusiyanasiyana	-55 mpaka 175	℃
TJ	Operating Junction Temperature Range	-55 mpaka 175	℃

Chizindikiro	Parameter	Mikhalidwe	Min.	Lembani.	Max.	Chigawo
BVDSS	Kutaya-Magwero Kuwonongeka kwa Voltage	VGS=0V , ID=250uA	40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	25 ℃, ID=1mA	---	0.050	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=25A	---	1.2	1.5	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=20A	---	1.7	2.5	mΩ
VGS (th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.7	2.6	V
△VGS(th)	VGS(th) Kutentha kwa Coefficient	VGS=VDS , ID =250uA	---	-6.94	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=40V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=40V , VGS=0V , TJ=55℃	---	---	10	uA
Zithunzi za IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	± 100	nA
gfs	Forward Transconductance	VDS=5V , ID=50A	---	160	---	S
Rg	Kukaniza Chipata	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Chipata Chokwanira (10V)	VDS=20V , VGS=10V , ID=25A	---	130	---	nC
Qgs	Gate-Source Charge		---	43	---
Qgd	Kulipira kwa Gate-Drain		---	83	---
Td (pa)	Yatsani Kuchedwa Nthawi	VDD=20V , VGEN=4.5V , RG=2.7Ω, ID=1A .	---	30	---	ns
Tr	Nthawi Yokwera		---	115	---
Td (kuchoka)	Nthawi Yochedwa Kuzimitsa		---	95	---
Tf	Nthawi Yogwa		---	80	---
Ciss	Input Capacitance	VDS=20V , VGS=0V , f=1MHz	---	8100	---	pF
Koss	Mphamvu Zotulutsa		---	1200	---
Crss	Reverse Transfer Capacitance		---	800	---