WSM340N10G N-channel 100V 340A TOLL-8L WINSOK MOSFET

Kufotokozera mwachidule:

Nambala Yachitsanzo:Chithunzi cha WSM340N10G

BVDSS:100 V

RDSON:1.6mΩ

ID:340A

Channel:N-channel

Phukusi:KULIMBITSA-8L

Chilimwe Chakugulitsa:Magetsi a WSM340N10G MOSFET ndi 100V, pano ndi 340A, kukana ndi 1.6mΩ, njira ndi N-channel, ndipo phukusi ndi TOLL-8L.

Mapulogalamu:Zida zamankhwala, ma drones, magetsi a PD, magetsi a LED, zida zamafakitale, ndi zina.

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Kufotokozera Kwambiri

WSM340N10G ndiye njira yopambana kwambiri ya N-Ch MOSFET yokhala ndi kachulukidwe kakang'ono kwambiri ka cell, yomwe imapereka RDSON yabwino kwambiri komanso chipata chazipata zamapulogalamu ambiri osinthira buck. WSM340N10G imakwaniritsa zofunikira za RoHS ndi Green Product, 100% EAS yotsimikizika ndi kudalirika kwathunthu kwa ntchito yovomerezeka.

Mawonekedwe

Advanced high cell density Trench technology , Super Low Gate Charge , Excellent CdV/dt effect kuchepa , 100% EAS Guaranteed , Green Chipangizo Chilipo.

Mapulogalamu

Synchronous rectification, DC/DC Converter, Load switch, Zida zamankhwala, ma drones, magetsi a PD, magetsi a LED, zida zamafakitale, ndi zina zambiri.

Zofunikira zofunika

Mtheradi Maximum Mavoti

Chizindikiro	Parameter	Muyezo	Mayunitsi
VDS	Mphamvu yamagetsi ya Drain-Source	100	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Kukhetsa Kopitirira Pano, VGS @ 10V	340	A
ID@TC=100℃	Kukhetsa Kopitirira Pano, VGS @ 10V	230	A
IDM	Kukhetsa Kokoka Pano..TC=25°C	1150	A
EAS	Avalanche Energy, Single pulse, L=0.5mH	1800	mJ
IAS	Avalanche Current, Single pulse,L=0.5mH	120	A
PD@TC=25℃	Kuwonongeka kwa Mphamvu Zonse	375	W
PD@TC=100℃	Kuwonongeka kwa Mphamvu Zonse	187	W
Mtengo wa TSTG	Kusungirako Kutentha Kusiyanasiyana	-55 mpaka 175	℃
TJ	Operating Junction Temperature Range	175	℃

Makhalidwe Amagetsi (TJ=25 ℃, pokhapokha atadziwika)

Chizindikiro	Parameter	Mikhalidwe	Min.	Lembani.	Max.	Chigawo
BVDSS	Kutaya-Magwero Kuwonongeka kwa Voltage	VGS=0V , ID=250uA	100	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	25 ℃, ID=1mA	---	0.096	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance	VGS=10V,ID=50A	---	1.6	2.3	mΩ
VGS (th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Kutentha kwa Coefficient	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=85V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=85V , VGS=0V , TJ=55℃	---	---	10	uA
Zithunzi za IGSS	Gate-Source Leakage Current	VGS=±25V , VDS=0V	---	---	± 100	nA
Rg	Kukaniza Chipata	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Chipata Chokwanira (10V)	VDS=50V , VGS=10V , ID=50A	---	260	---	nC
Qgs	Gate-Source Charge		---	80	---
Qgd	Kulipira kwa Gate-Drain		---	60	---
Td (pa)	Yatsani Kuchedwa Nthawi	VDD=50V , VGS=10V ,RG=1Ω,RL=1Ω,IDS=1A.	---	88	---	ns
Tr	Nthawi Yokwera		---	50	---
Td (kuchoka)	Nthawi Yochedwa Kuzimitsa		---	228	---
Tf	Nthawi Yogwa		---	322	---
Ciss	Input Capacitance	VDS=40V , VGS=0V , f=1MHz	---	13900	---	pF
Koss	Mphamvu Zotulutsa		---	6160	---
Crss	Reverse Transfer Capacitance		---	220	---