WSP4016 N-channel 40V 15.5A SOP-8 WINSOK MOSFET
Kufotokozera Kwambiri
WSP4016 ndiye njira yopambana kwambiri ya N-ch MOSFET yokhala ndi kachulukidwe kakang'ono kwambiri ka cell, yomwe imapereka ndalama zabwino kwambiri za RDSON ndi zipata pazogwiritsa ntchito zambiri zosinthira buck. WSP4016 imakwaniritsa zofunikira za RoHS ndi Green Product, 100% EAS yotsimikizika ndi kudalirika kokwanira kovomerezeka.
Mawonekedwe
Advanced high cell density Trench technology, Super Low Gate Charge, Excellent CdV/dt effect kuchepa, 100% EAS Guaranteed, Green Chipangizo Chikupezeka.
Mapulogalamu
White LED boost converters ,Magalimoto Kachitidwe ,Industrial DC/DC Conversion Circuits, EAutomotive electronics, magetsi a LED, ma audio, zinthu za digito, zida zazing'ono zapakhomo, zamagetsi ogula, matabwa otetezera, ndi zina zotero.
nambala yazinthu zofananira
AO AOSP66406, ON FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM5420.
Zofunikira zofunika
Chizindikiro | Parameter | Muyezo | Mayunitsi |
VDS | Mphamvu yamagetsi ya Drain-Source | 40 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25℃ | Kukhetsa Kopitirira Pano, VGS @ 10V1 | 15.5 | A |
ID@TC=70℃ | Kukhetsa Kopitirira Pano, VGS @ 10V1 | 8.4 | A |
IDM | Pulsed Drain Current2 | 30 | A |
PD@TA=25℃ | Kuwonongeka Kwa Mphamvu Zonse TA=25°C | 2.08 | W |
PD@TA=70℃ | Kuwonongeka Kwa Mphamvu Zonse TA=70°C | 1.3 | W |
Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ |
TJ | Operating Junction Temperature Range | -55 mpaka 150 | ℃ |
Makhalidwe Amagetsi (TJ=25 ℃, pokhapokha ngati tafotokozera mwanjira ina)
Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo |
BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=7A | --- | 8.5 | 11.5 | mΩ |
VGS=4.5V , ID=5A | --- | 11 | 14.5 | |||
VGS (th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 25 | |||
Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ± 100 | nA |
gfs | Forward Transconductance | VDS=5V , ID=15A | --- | 31 | --- | S |
Qg | Total Gate Charge (4.5V) | VDS=20V ,VGS=10V ,ID=7A | --- | 20 | 30 | nC |
Qgs | Gate-Source Charge | --- | 3.9 | --- | ||
Qgd | Kulipira kwa Gate-Drain | --- | 3 | --- | ||
Td (pa) | Yatsani Kuchedwa Nthawi | VDD=20V,VGEN=10V,RG=1Ω, ID=1A, RL=20Ω. | --- | 12.6 | --- | ns |
Tr | Nthawi Yokwera | --- | 10 | --- | ||
Td (kuchoka) | Nthawi Yochedwa Kuzimitsa | --- | 23.6 | --- | ||
Tf | Nthawi Yogwa | --- | 6 | --- | ||
Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 1125 | --- | pF |
Koss | Mphamvu Zotulutsa | --- | 132 | --- | ||
Crss | Reverse Transfer Capacitance | --- | 70 | --- |
Zindikirani :
1.Pulse test: PW<= 300us ntchito kuzungulira<= 2%.
2.Guaranteed ndi mapangidwe, osati kuyesedwa kwa kupanga.