WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET

Kufotokozera mwachidule:

Nambala Yachitsanzo:Chithunzi cha WSP4447

BVDSS:-40V

RDSON:13m pa

ID:-11A

Channel:P-Channel

Phukusi:SOP-8

Chilimwe Chakugulitsa:Magetsi a WSP4447 MOSFET ndi -40V, pano ndi -11A, kukana ndi 13mΩ, njira ndi P-Channel, ndi phukusi ndi SOP-8.

Mapulogalamu:Ndudu zamagetsi, ma charger opanda zingwe, ma mota, ma drone, zida zamankhwala, ma charger agalimoto, zowongolera, zinthu za digito, zida zazing'ono, ndi zamagetsi zogula.

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Kufotokozera Kwambiri

WSP4447 ndi MOSFET yochita bwino kwambiri yomwe imagwiritsa ntchito ukadaulo wa ngalande ndipo imakhala ndi kachulukidwe kakang'ono ka cell.Imapereka mtengo wabwino kwambiri wa RDSON ndi chipata, ndikupangitsa kuti ikhale yoyenera kugwiritsidwa ntchito pamapulogalamu ambiri osinthika a buck.WSP4447 imakwaniritsa miyezo ya RoHS ndi Green Product, ndipo imabwera ndi chitsimikizo cha 100% EAS chodalirika kwathunthu.

Mawonekedwe

Ukadaulo waukadaulo wa Advanced Trench umalola kuchulukira kwa ma cell, zomwe zimapangitsa Green Device yokhala ndi Super Low Gate Charge komanso kutsika kwabwino kwa CdV/dt.

Mapulogalamu

High Frequency Converter kwa Mitundu Yamagetsi Yamagetsi
Chosinthirachi chapangidwa kuti chizitha kuyendetsa bwino zida zosiyanasiyana, kuphatikiza ma laputopu, zida zamasewera, zida zolumikizirana, ndudu za e-fodya, ma charger opanda zingwe, ma mota, ma drones, zida zamankhwala, ma charger agalimoto, zowongolera, zinthu za digito, zida zazing'ono zapanyumba, ndi ogula. zamagetsi.

nambala yazinthu zofananira

AOS AO4425 AO4485,ON FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421，Sinopower SM4403PSK，RUICHIPS RU40L10H.

Zofunikira zofunika

Chizindikiro	Parameter	Muyezo	Mayunitsi
VDS	Mphamvu yamagetsi ya Drain-Source	-40	V
VGS	Gate-Source Voltage	±20	V
ID@TA=25℃	Kukhetsa Kopitirizabe Panopa, VGS @ -10V1	-11	A
ID@TA=70℃	Kukhetsa Kopitirizabe Panopa, VGS @ -10V1	-9.0	A
IDM a	300µs Pulsed Drain Current (VGS=-10V)	-44	A
EAS b	Mphamvu ya Avalanche, Kugunda Kumodzi (L=0.1mH)	54	mJ
IAS b	Avalanche Current, Kugunda Kumodzi (L=0.1mH)	-33	A
PD@TA=25℃	Kuwonongeka kwa Mphamvu Zonse4	2.0	W
Mtengo wa TSTG	Kusungirako Kutentha Kusiyanasiyana	-55 mpaka 150	℃
TJ	Operating Junction Temperature Range	-55 mpaka 150	℃

Chizindikiro	Parameter	Zoyenera	Min.	Lembani.	Max.	Chigawo
BVDSS	Kutaya-Magwero Kuwonongeka kwa Voltage	VGS=0V , ID=-250uA	-40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Kufotokozera kwa 25 ℃ , ID = -1mA	---	-0.018	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-10V , ID=-13A	---	13	16	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-4.5V , ID=-5A	---	18	26
VGS (th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-1.4	-1.9	-2.4	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Kutentha kwa Coefficient		---	5.04	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-32V , VGS=0V , TJ=25℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-32V , VGS=0V , TJ=55℃	---	---	-5
Zithunzi za IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	± 100	nA
gfs	Forward Transconductance	VDS=-5V , ID=-10A	---	18	---	S
Qg	Chipata Chokwanira (-4.5V)	VDS=-20V , VGS=-10V , ID=-11A	---	32	---	nC
Qgs	Gate-Source Charge		---	5.2	---
Qgd	Kulipira kwa Gate-Drain		---	8	---
Td (pa)	Yatsani Kuchedwa Nthawi	VDD=-20V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω	---	14	---	ns
Tr	Nthawi Yokwera		---	12	---
Td (kuchoka)	Nthawi Yochedwa Kuzimitsa		---	41	---
Tf	Nthawi Yogwa		---	22	---
Ciss	Input Capacitance	VDS=-15V , VGS=0V , f=1MHz	---	1500	---	pF
Koss	Mphamvu Zotulutsa		---	235	---
Crss	Reverse Transfer Capacitance		---	180	---