WSR140N12 N-channel 120V 140A TO-220-3L WINSOK MOSFET

Kufotokozera mwachidule:

Nambala Yachitsanzo:Chithunzi cha WSR140N12

BVDSS:120V

RDSON:5 mΩ pa

ID:140A

Channel:N-channel

Phukusi:KUTI-220-3L

Chilimwe Chakugulitsa:Magetsi a WSR140N12 MOSFET ndi 120V, pano ndi 140A, kukana ndi 5mΩ, njira ndi N-channel, ndipo phukusi ndi TO-220-3L.

Mapulogalamu:Mphamvu zamagetsi, zamankhwala, zida zazikulu, BMS etc.

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Kufotokozera Kwambiri

WSR140N12 ndiye njira yopambana kwambiri ya N-ch MOSFET yokhala ndi kachulukidwe kakang'ono kwambiri ka cell, yomwe imapereka RDSON yabwino kwambiri komanso kulipiritsa zipata pamapulogalamu ambiri osinthira a buck.WSR140N12 imakwaniritsa zofunikira za RoHS ndi Green Product, 100% EAS yotsimikizika ndi kudalirika kwathunthu kwa ntchito yovomerezeka.

Mawonekedwe

Advanced high cell density Trench Technology, Super Low Gate Charge, Excellent CdV/dt effect kuchepa, 100% EAS Guaranteed, Green Chipangizo Chilipo.

Mapulogalamu

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Mphamvu zamagetsi, zamankhwala, zida zazikulu, BMS etc.

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Mtengo wa STP40NF12

Zofunikira zofunika

Chizindikiro	Parameter	Muyezo	Mayunitsi
VDS	Mphamvu yamagetsi ya Drain-Source	120	V
VGS	Gate-Source Voltage	±20	V
ID	Kukhetsa Kopitirira Pano, VGS @ 10V(TC=25℃)	140	A
IDM	Pulsed Drain Current	330	A
EAS	Single Pulse Avalanche Energy	400	mJ
PD	Kuwonongeka Kwa Mphamvu Zonse... C=25℃)	192	W
RJA	Thermal resistance, mphambano-yozungulira	62	℃/W
RθJC	Thermal resistance, mphambano-case	0.65	℃/W
Mtengo wa TSTG	Kusungirako Kutentha Kusiyanasiyana	-55 mpaka 150	℃
TJ	Operating Junction Temperature Range	-55 mpaka 150	℃

Chizindikiro	Parameter	Zoyenera	Min.	Lembani.	Max.	Chigawo
BVDSS	Kutaya-Magwero Kuwonongeka kwa Voltage	VGS=0V , ID=250uA	120	---	---	V
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=30A	---	5.0	6.5	mΩ
VGS (th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	---	4.0	V
IDSS	Drain-Source Leakage Current	VDS=120V , VGS=0V , TJ=25℃	---	---	1	uA
Zithunzi za IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	± 100	nA
Qg	Total Gate Charge	VDS=50V , VGS=10V , ID=15A	---	68.9	---	nC
Qgs	Gate-Source Charge		---	18.1	---
Qgd	Kulipira kwa Gate-Drain		---	15.9	---
Td (pa)	Yatsani Kuchedwa Nthawi	VDD=50V , VGS=10VRG=2Ω,ID=25A	---	30.3	---	ns
Tr	Nthawi Yokwera		---	33.0	---
Td (kuchoka)	Nthawi Yochedwa Kuzimitsa		---	59.5	---
Tf	Nthawi Yogwa		---	11.7	---
Ciss	Input Capacitance	VDS=50V , VGS=0V , f=1MHz	---	5823	---	pF
Koss	Mphamvu Zotulutsa		---	778.3	---
Crss	Reverse Transfer Capacitance		---	17.5	---