WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

Kufotokozera mwachidule:

Nambala Yachitsanzo:WSR200N08

BVDSS:80v ndi

RDSON:2.9mΩ

ID:200A

Channel:N-channel

Phukusi:KUTI-220-3L

Chilimwe Chakugulitsa:WSR200N08 MOSFET imatha kugwira mpaka 80 volts ndi 200 amps ndi kukana kwa 2.9 milliohms.Ndi chipangizo cha N-channel ndipo chimabwera mu phukusi la TO-220-3L.

Mapulogalamu:Ndudu zamagetsi, ma charger opanda zingwe, ma motors, makina oyendetsera mabatire, magwero amagetsi osungira, magalimoto osayendetsedwa ndi ndege, zida zamankhwala, zida zolipiritsa magalimoto amagetsi, zida zowongolera, makina osindikizira a 3D, zida zamagetsi, zida zazing'ono zapanyumba, ndi zamagetsi ogula.

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Kufotokozera Kwambiri

WSR200N08 ndiye njira yopambana kwambiri ya N-Ch MOSFET yokhala ndi kachulukidwe kakang'ono kwambiri ka cell, yomwe imapereka RDSON yabwino kwambiri komanso kulipiritsa zipata pazogwiritsa ntchito zambiri zosinthira buck.WSR200N08 imakwaniritsa zofunikira za RoHS ndi Green Product, 100% EAS yotsimikiziridwa ndi kudalirika kwa ntchito zonse kuvomerezedwa.

Mawonekedwe

Ukadaulo wotsogola kwambiri wa cell density Trench, Super Low Gate Charge, CdV/dt effect yabwino kwambiri, 100% EAS Guaranteed, Green Chipangizo Chilipo.

Mapulogalamu

Kusintha ntchito, Power Management for Inverter Systems, ndudu zamagetsi, kuyitanitsa opanda zingwe, ma mota, BMS, zida zamagetsi zadzidzidzi, ma drones, zamankhwala, kulipiritsa magalimoto, owongolera, osindikiza a 3D, zinthu zama digito, zida zazing'ono zapakhomo, zamagetsi ogula, ndi zina zambiri.

nambala yazinthu zofananira

AO AOT480L, ON FDP032N08B,ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, etc.

Zofunikira zofunika

Makhalidwe Amagetsi (TJ=25 ℃, pokhapokha atadziwika)

Chizindikiro	Parameter	Muyezo	Mayunitsi
VDS	Mphamvu yamagetsi ya Drain-Source	80	V
VGS	Gate-Source Voltage	±25	V
ID@TC=25℃	Kukhetsa Kopitirira Pano, VGS @ 10V1	200	A
ID@TC=100℃	Kukhetsa Kopitirira Pano, VGS @ 10V1	144	A
IDM	Kukhetsa Kwakakoka2,TC=25°C	790	A
EAS	Avalanche Energy, Single pulse, L=0.5mH	1496	mJ
IAS	Avalanche Current, Single pulse,L=0.5mH	200	A
PD@TC=25℃	Kuwonongeka kwa Mphamvu Zonse4	345	W
PD@TC=100℃	Kuwonongeka kwa Mphamvu Zonse4	173	W
Mtengo wa TSTG	Kusungirako Kutentha Kusiyanasiyana	-55 mpaka 175	℃
TJ	Operating Junction Temperature Range	175	℃

Chizindikiro	Parameter	Zoyenera	Min.	Lembani.	Max.	Chigawo
BVDSS	Kutaya-Magwero Kuwonongeka kwa Voltage	VGS=0V , ID=250uA	80	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	25 ℃, ID=1mA	---	0.096	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V,ID=100A	---	2.9	3.5	mΩ
VGS (th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Kutentha kwa Coefficient	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=80V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=80V , VGS=0V , TJ=55℃	---	---	10	uA
Zithunzi za IGSS	Gate-Source Leakage Current	VGS=±25V , VDS=0V	---	---	± 100	nA
Rg	Kukaniza Chipata	VDS=0V , VGS=0V , f=1MHz	---	3.2	---	Ω
Qg	Chipata Chokwanira (10V)	VDS=80V , VGS=10V , ID=30A	---	197	---	nC
Qgs	Gate-Source Charge		---	31	---
Qgd	Kulipira kwa Gate-Drain		---	75	---
Td (pa)	Yatsani Kuchedwa Nthawi	VDD=50V , VGS=10V ,RG=3Ω, ID=30A	---	28	---	ns
Tr	Nthawi Yokwera		---	18	---
Td (kuchoka)	Nthawi Yochedwa Kuzimitsa		---	42	---
Tf	Nthawi Yogwa		---	54	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	8154	---	pF
Koss	Mphamvu Zotulutsa		---	1029	---
Crss	Reverse Transfer Capacitance		---	650	---