WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
Kufotokozera Kwambiri
Ma MOSFET a WST2011 ndi ma transistors apamwamba kwambiri a P-ch omwe amapezeka, okhala ndi kuchulukana kwa ma cell. Amapereka magwiridwe antchito apadera, okhala ndi RDSON yotsika ndi chipata cha chipata, kuwapangitsa kukhala abwino pakusintha kwamagetsi pang'ono ndikusintha ma switch. Kuphatikiza apo, WST2011 imakumana ndi miyezo ya RoHS ndi Green Product ndipo imadzitamandira ndi kuvomerezeka kwathunthu.
Mawonekedwe
Ukadaulo waukadaulo wa Advanced Trench umalola kuchulukira kwa ma cell, zomwe zimapangitsa Green Device yokhala ndi Super Low Gate Charge komanso kutsika kwabwino kwa CdV/dt.
Mapulogalamu
Kusinthasintha kwamphamvu kwamphamvu kwapang'onopang'ono ndikoyenera kugwiritsidwa ntchito mu MB/NB/UMPC/VGA, makina amagetsi a DC-DC, ma switch switch, ndudu za e-fodya, zowongolera, zinthu zama digito, zida zazing'ono zapakhomo, ndi magetsi ogula. .
nambala yazinthu zofananira
ON FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,
Zofunikira zofunika
Chizindikiro | Parameter | Muyezo | Mayunitsi | |
10s | Khazikika | |||
VDS | Mphamvu yamagetsi ya Drain-Source | -20 | V | |
VGS | Gate-Source Voltage | ±12 | V | |
ID@TA=25℃ | Kukhetsa Kopitirira Pano, VGS @ -4.5V1 | -3.6 | -3.2 | A |
ID@TA=70℃ | Kukhetsa Kopitirira Pano, VGS @ -4.5V1 | -2.6 | -2.4 | A |
IDM | Pulsed Drain Current2 | -12 | A | |
PD@TA=25℃ | Kuwonongeka Kwa Mphamvu Zonse3 | 1.7 | 1.4 | W |
PD@TA=70℃ | Kuwonongeka Kwa Mphamvu Zonse3 | 1.2 | 0.9 | W |
Mtengo wa TSTG | Kusungirako Kutentha Kusiyanasiyana | -55 mpaka 150 | ℃ | |
TJ | Operating Junction Temperature Range | -55 mpaka 150 | ℃ |
Chizindikiro | Parameter | Mikhalidwe | Min. | Lembani. | Max. | Chigawo |
BVDSS | Kutaya-Magwero Kuwonongeka kwa Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
△BVDSS/△TJ | BVDSS Temperature Coefficient | Kufotokozera kwa 25 ℃ , ID = -1mA | --- | -0.011 | --- | V/℃ |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-2A | --- | 80 | 85 | mΩ |
VGS=-2.5V , ID=-1A | --- | 95 | 115 | |||
VGS (th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -1.0 | -1.5 | V |
△VGS(th) | VGS(th) Kutentha kwa Coefficient | --- | 3.95 | --- | mV/℃ | |
IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
VDS=-16V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
Zithunzi za IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ± 100 | nA |
gfs | Forward Transconductance | VDS=-5V , ID=-2A | --- | 8.5 | --- | S |
Qg | Chipata Chokwanira (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-2A | --- | 3.3 | 11.3 | nC |
Qgs | Gate-Source Charge | --- | 1.1 | 1.7 | ||
Qgd | Kulipira kwa Gate-Drain | --- | 1.1 | 2.9 | ||
Td (pa) | Yatsani Kuchedwa Nthawi | VDD=-15V , VGS=-4.5V , RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
Tr | Nthawi Yokwera | --- | 9.3 | --- | ||
Td (kuchoka) | Nthawi Yochedwa Kuzimitsa | --- | 15.4 | --- | ||
Tf | Nthawi Yogwa | --- | 3.6 | --- | ||
Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 750 | --- | pF |
Koss | Mphamvu Zotulutsa | --- | 95 | --- | ||
Crss | Reverse Transfer Capacitance | --- | 68 | --- |