WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET

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WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET

Kufotokozera mwachidule:


  • Nambala Yachitsanzo:WST2011
  • BVDSS:-20V
  • RDSON:80m pa
  • ID:-3.2A
  • Channel:Dual P-Channel
  • Phukusi:SOT-23-6L
  • Chilimwe Chakugulitsa:Magetsi a WST2011 MOSFET ndi -20V, pano ndi -3.2A, kukana ndi 80mΩ, njira ndi Dual P-Channel, ndipo phukusi ndi SOT-23-6L.
  • Mapulogalamu:E-ndudu, zowongolera, zinthu zama digito, zida zazing'ono, zosangalatsa zapanyumba.
  • Tsatanetsatane wa Zamalonda

    Kugwiritsa ntchito

    Zolemba Zamalonda

    Kufotokozera Kwambiri

    Ma MOSFET a WST2011 ndi ma transistors apamwamba kwambiri a P-ch omwe amapezeka, okhala ndi kuchulukana kwa ma cell. Amapereka magwiridwe antchito apadera, okhala ndi RDSON yotsika ndi chipata cha chipata, kuwapangitsa kukhala abwino pakusintha kwamagetsi pang'ono ndikusintha ma switch. Kuphatikiza apo, WST2011 imakumana ndi miyezo ya RoHS ndi Green Product ndipo imadzitamandira ndi kuvomerezeka kwathunthu.

    Mawonekedwe

    Ukadaulo waukadaulo wa Advanced Trench umalola kuchulukira kwa ma cell, zomwe zimapangitsa Green Device yokhala ndi Super Low Gate Charge komanso kutsika kwabwino kwa CdV/dt.

    Mapulogalamu

    Kusinthasintha kwamphamvu kwamphamvu kwapang'onopang'ono ndikoyenera kugwiritsidwa ntchito mu MB/NB/UMPC/VGA, makina amagetsi a DC-DC, ma switch switch, ndudu za e-fodya, zowongolera, zinthu zama digito, zida zazing'ono zapakhomo, ndi magetsi ogula. .

    nambala yazinthu zofananira

    ON FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,

    Zofunikira zofunika

    Chizindikiro Parameter Muyezo Mayunitsi
    10s Khazikika
    VDS Mphamvu yamagetsi ya Drain-Source -20 V
    VGS Gate-Source Voltage ±12 V
    ID@TA=25℃ Kukhetsa Kopitirira Pano, VGS @ -4.5V1 -3.6 -3.2 A
    ID@TA=70℃ Kukhetsa Kopitirira Pano, VGS @ -4.5V1 -2.6 -2.4 A
    IDM Pulsed Drain Current2 -12 A
    PD@TA=25℃ Kuwonongeka Kwa Mphamvu Zonse3 1.7 1.4 W
    PD@TA=70℃ Kuwonongeka Kwa Mphamvu Zonse3 1.2 0.9 W
    Mtengo wa TSTG Kusungirako Kutentha Kusiyanasiyana -55 mpaka 150
    TJ Operating Junction Temperature Range -55 mpaka 150
    Chizindikiro Parameter Mikhalidwe Min. Lembani. Max. Chigawo
    BVDSS Kutaya-Magwero Kuwonongeka kwa Voltage VGS=0V , ID=-250uA -20 --- --- V
    △BVDSS/△TJ BVDSS Temperature Coefficient Kufotokozera kwa 25 ℃ , ID = -1mA --- -0.011 --- V/℃
    RDS(ON) Static Drain-Source On-Resistance2 VGS=-4.5V , ID=-2A --- 80 85
           
        VGS=-2.5V , ID=-1A --- 95 115  
    VGS (th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.5 -1.0 -1.5 V
               
    △VGS(th) VGS(th) Kutentha kwa Coefficient   --- 3.95 --- mV/℃
    IDSS Drain-Source Leakage Current VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 uA
           
        VDS=-16V , VGS=0V , TJ=55℃ --- --- -5  
    Zithunzi za IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ± 100 nA
    gfs Forward Transconductance VDS=-5V , ID=-2A --- 8.5 --- S
    Qg Chipata Chokwanira (-4.5V) VDS=-15V , VGS=-4.5V , ID=-2A --- 3.3 11.3 nC
    Qgs Gate-Source Charge --- 1.1 1.7
    Qgd Kulipira kwa Gate-Drain --- 1.1 2.9
    Td (pa) Yatsani Kuchedwa Nthawi VDD=-15V , VGS=-4.5V ,

    RG=3.3Ω, ID=-2A

    --- 7.2 --- ns
    Tr Nthawi Yokwera --- 9.3 ---
    Td (kuchoka) Nthawi Yochedwa Kuzimitsa --- 15.4 ---
    Tf Nthawi Yogwa --- 3.6 ---
    Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 750 --- pF
    Koss Mphamvu Zotulutsa --- 95 ---
    Crss Reverse Transfer Capacitance --- 68 ---

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