WST2088 N-channel 20V 8.8A SOT-23-3L WINSOK MOSFET

Kufotokozera mwachidule:

Nambala Yachitsanzo:WST2088

BVDSS:20 V

RDSON:8m pa

ID:8.8A

Channel:N-channel

Phukusi:SOT-23-3L

Chilimwe Chakugulitsa:Magetsi a WST2088 MOSFET ndi 20V, pano ndi 8.8A, kukana ndi 8mΩ, njira ndi N-channel, ndi phukusi ndi SOT-23-3L.

Mapulogalamu:Ndudu zamagetsi, zowongolera, zida zama digito, zida zazing'ono zapanyumba, ndi zamagetsi ogula.

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Kufotokozera Kwambiri

Ma WST2088 MOSFET ndi ma transistors apamwamba kwambiri a N-channel pamsika. Ali ndi kachulukidwe kakang'ono kwambiri ka cell, zomwe zimapangitsa kuti RDSON ikhale yabwino kwambiri komanso chipata. Ma MOSFET awa ndiabwino pakusintha kwamagetsi pang'ono ndikusintha ma switch. Amakwaniritsa zofunikira za RoHS ndi Green Product ndipo ayesedwa kwathunthu kuti ndi odalirika.

Mawonekedwe

Ukadaulo waukadaulo wa Advanced Trench wokhala ndi kachulukidwe wama cell, Super Low Gate Charge, komanso Cdv/dt zotsatira zatsika kwambiri, zomwe zimapangitsa kukhala Chipangizo Chobiriwira.

Mapulogalamu

Mapulogalamu amagetsi, mabwalo okhala ndi kusintha kwakukulu komanso ma frequency apamwamba, magetsi osasokoneza, ndudu za e-fodya, owongolera, zida zamagetsi, zida zazing'ono zapanyumba, ndi zamagetsi ogula.

nambala yazinthu zofananira

AO AO3416, DINTEK DTS2300A DTS2318 DTS2314 DTS2316 DTS2322 DTS3214, etc.

Zofunikira zofunika

Chizindikiro	Parameter	Muyezo	Mayunitsi
VDS	Mphamvu yamagetsi ya Drain-Source	20	V
VGS	Gate-Source Voltage	±12	V
ID@Tc=25℃	Kukhetsa Kopitirizabe Panopa, VGS @ 4.5V	8.8	A
ID@Tc=70℃	Kukhetsa Kopitirizabe Panopa, VGS @ 4.5V	6.2	A
IDP	Pulsed Drain Current	40	A
PD@TA=25℃	Kuwonongeka kwa Mphamvu Zonse	1.5	W
Mtengo wa TSTG	Kusungirako Kutentha Kusiyanasiyana	-55 mpaka 150	℃
TJ	Operating Junction Temperature Range	-55 mpaka 150	℃

Makhalidwe Amagetsi (TJ=25 ℃, pokhapokha ngati tafotokozera mwanjira ina)

Chizindikiro	Parameter	Mikhalidwe	Min.	Lembani.	Max.	Chigawo
BVDSS	Kutaya-Magwero Kuwonongeka kwa Voltage	VGS=0V, ID=250uA	20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	25 ℃, ID=1mA	---	0.018	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V, ID=6A	---	8	13	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=2.5V, ID=5A	---	10	19	mΩ
VGS (th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	0.5	---	1.3	V
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V.	---	---	10	uA
Zithunzi za IGSS	Gate-Source Leakage Current	VGS=±12V , VDS=0V	---	---	± 100	nA
Qg	Total Gate Charge	VDS=15V , VGS=4.5V , ID=6A	---	16	---	nC
Qgs	Gate-Source Charge		---	3	---
Qgd	Kulipira kwa Gate-Drain		---	4.5	---
Td (pa)	Yatsani Kuchedwa Nthawi	VDS=10V , VGS=4.5V ,RG=3.3Ω ID=1A	---	10	---	ns
Tr	Nthawi Yokwera		---	13	---
Td (kuchoka)	Nthawi Yochedwa Kuzimitsa		---	28	---
Tf	Nthawi Yogwa		---	7	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	1400	---	pF
Koss	Mphamvu Zotulutsa		---	170	---
Crss	Reverse Transfer Capacitance		---	135	---