WST2088A N-channel 20V 7.5A SOT-23-3L WINSOK MOSFET

Kufotokozera mwachidule:

Nambala Yachitsanzo:Chithunzi cha WST2088A

BVDSS:20 V

RDSON:10.7mΩ

ID:7.5A

Channel:N-channel

Phukusi:SOT-23-3L

Chilimwe Chakugulitsa:Magetsi a WST2088A MOSFET ndi 20V, panopa ndi 7.5A, kukana ndi 10.7mΩ, njira ndi N-channel, ndi phukusi SOT-23-3L.

Mapulogalamu:Ndudu zamagetsi, zowongolera, zinthu zama digito, zida zazing'ono zapakhomo, zamagetsi zamagetsi, ndi zina zambiri.

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Tsatanetsatane wa Zamalonda

Kugwiritsa ntchito

Zolemba Zamalonda

Kufotokozera Kwambiri

WST2088A ndiye njira yopambana kwambiri ya N-ch MOSFET yokhala ndi kachulukidwe kakang'ono kwambiri ka cell, yomwe imapereka RDSON yabwino kwambiri komanso chipata chamagetsi pamakina ang'onoang'ono osinthira mphamvu ndikusintha ntchito. WST2088A imakwaniritsa zofunikira za RoHS ndi Green Product ndi kudalirika kokwanira kovomerezeka.

Mawonekedwe

Ukadaulo wapamwamba kwambiri wama cell density Trench , Super Low Gate Charge , Cdv/dt effect yabwino kwambiri kutsika , Green Chipangizo Chikupezeka

Mapulogalamu

Kugwiritsa ntchito magetsi, Kusinthasintha Kwamphamvu komanso Kuthamanga Kwambiri, Kupereka Mphamvu Zosasokoneza, Ndudu zamagetsi, zowongolera, zinthu zama digito, zida zazing'ono zapakhomo, zamagetsi ogula, ndi zina zambiri.

nambala yazinthu zofananira

AO AO3416, ON NTR3C21NZ, VISHAY Si2312CDS, Nxperian PMV16XN, etc.

Zofunikira zofunika

Makhalidwe Amagetsi (TJ=25 ℃, pokhapokha ngati tafotokozera mwanjira ina)

Chizindikiro	Parameter	Muyezo	Mayunitsi
VDS	Mphamvu yamagetsi ya Drain-Source	20	V
VGS	Gate-Source Voltage	±12	V
ID@Tc=25℃	Kukhetsa Kopitirizabe Panopa, VGS @ 4.5V	7.5	A
ID@Tc=70℃	Kukhetsa Kopitirizabe Panopa, VGS @ 4.5V	4.5	A
IDP	Pulsed Drain Current	24	A
PD@TA=25℃	Kuwonongeka kwa Mphamvu Zonse	1.25	W
Mtengo wa TSTG	Kusungirako Kutentha Kusiyanasiyana	-55 mpaka 150	℃
TJ	Operating Junction Temperature Range	-55 mpaka 150	℃

Chizindikiro	Parameter	Mikhalidwe	Min.	Lembani.	Max.	Chigawo
BVDSS	Kutaya-Magwero Kuwonongeka kwa Voltage	VGS=0V , ID=250uA	20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	25 ℃, ID=1mA	---	0.018	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=6A	---	10.7	14	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=2.5V , ID=5A	---	12.8	17
VGS (th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	0.4	0.63	1.2	V
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V.	---	---	10	uA
Zithunzi za IGSS	Gate-Source Leakage Current	VGS=±12V , VDS=0V	---	---	± 100	nA
Qg	Total Gate Charge	VDS=15V , VGS=4.5V , ID=6A	---	10	---	nC
Qgs	Gate-Source Charge		---	1.6	---
Qgd	Kulipira kwa Gate-Drain		---	3.4	---
Td (pa)	Yatsani Kuchedwa Nthawi	VDS=10V , VGS=4.5V ,RG=3.3Ω ID=1A	---	8	---	ns
Tr	Nthawi Yokwera		---	15	---
Td (kuchoka)	Nthawi Yochedwa Kuzimitsa		---	33	---
Tf	Nthawi Yogwa		---	13	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	590	---	pF
Koss	Mphamvu Zotulutsa		---	125	---
Crss	Reverse Transfer Capacitance		---	90	---