Magawo anayi a N-channel yowonjezera MOSFET
(1) Chigawo chosiyana chokana (chomwe chimatchedwanso kuti unsaturated region)
Ucs" Ucs (th) (voltage yoyatsa), uDs" UGs-Ucs (th), ndi chigawo chakumanzere kwa chithunzi chomwe chatsegulidwa tchanelo. Mtengo wa UDs ndi wochepa m'dera lino, ndipo kukana kwa njira kumayendetsedwa ndi ma UG okha. Pamene uGs ndi yotsimikizika, ip ndi uDs mu chiyanjano chotsatira, chigawocho chimayesedwa ngati mizere yowongoka. Panthawi imeneyi, munda zotsatira chubu D, S pakati ofanana ndi voteji UGS
Imayendetsedwa ndi voltage UGS variable resistance.
(2) chigawo chomwe chilipo nthawi zonse (chomwe chimatchedwanso kuti saturation region, amplification region, dera logwira ntchito)
Ucs ≥ Ucs (h) ndi Ubs ≥ UcsUssth), kwa chithunzi cha mbali yakumanja ya chisanadze kutsina panjira, koma sanaphwanyidwe m'dera, m'dera, pamene uGs ayenera kukhala, ib pafupifupi alibe. kusintha ndi ma UDs, ndi mawonekedwe okhazikika. imayang'aniridwa ndi ma UG okha, ndiye MOSFETD, S ikufanana ndi ma voltage uGs kuwongolera komwe kulipo. MOSFET imagwiritsidwa ntchito m'mabwalo okulitsa, nthawi zambiri pa ntchito ya MOSFET D, S ndiyofanana ndi gwero lamagetsi la uGs. MOSFET yomwe imagwiritsidwa ntchito m'mabwalo okulitsa, nthawi zambiri amagwira ntchito m'derali, lomwe limadziwikanso kuti malo okulitsa.
(3) Malo odulirapo (omwe amatchedwanso malo odulirapo)
Malo odulirapo (omwe amadziwikanso kuti malo odulidwa) kuti akumane ndi ucs "Ues (th) pa chithunzi chomwe chili pafupi ndi chigawo chopingasa, tchanelo chonse chimatsekedwa, chomwe chimadziwika kuti clip off, io = 0 , chubu sichigwira ntchito.
(4) malo owonongeka
Dera losweka lili m'dera lomwe lili kumanja kwa chithunzicho. Ndi ma UD omwe akuchulukirachulukira, mphambano ya PN imakhala ndi magetsi ochulukirapo komanso kuwonongeka, ip imakula kwambiri. Chubu chiyenera kugwiritsidwa ntchito kuti zisagwire ntchito m'dera losweka. The kulanda khalidwe pamapindikira akhoza anachokera linanena bungwe khalidwe pamapindikira. Pa njira yomwe imagwiritsidwa ntchito ngati graph kuti mupeze. Mwachitsanzo, mu Chithunzi 3 (a) kwa Ubs = 6V mzere wowongoka, mphambano yake ndi ma curve osiyanasiyana omwe amafanana ndi i, Us ma values mu ib- Uss coordinates olumikizidwa ku curve, ndiko kuti, kuti apeze mawonekedwe osinthira.
Ma parameters aMOSFET
Pali magawo ambiri a MOSFET, kuphatikiza magawo a DC, magawo a AC ndi malire, koma magawo akulu otsatirawa okha ndi omwe akuyenera kugwiritsidwa ntchito mofananamo: saturated drain-source current IDSS pinch-off voltage Up, (machubu amtundu wa junction ndi kuchepa. -mtundu wa machubu opangidwa ndi zipata, kapena ma voliyumu a UT (machubu opangidwa ndi insulated-gate), trans-conductance gm, ma BUDS otulutsa magetsi otulutsa mphamvu, PDSM yamphamvu kwambiri, komanso IDSM yapano.
(1) Madzi akukhetsa madzi
Kukhetsa kwamadzi kwapano kwa IDSS ndiko kukhetsa komwe kulipo pamphambano kapena mtundu wa depletion wotsekereza chipata cha MOSFET pomwe chipata chamagetsi UGS = 0.
(2) Mphamvu yamagetsi yamagetsi
Phokoso la pinch-off UP ndi voteji yachipata mumtundu wamtundu wa MOSFET kapena mtundu wa depletion insulated-gate womwe umangodula pakati pa kukhetsa ndi gwero. Monga zikuwonetsedwa mu 4-25 pa chubu cha N-channel UGS curve ID, zitha kumveka kuti muwone kufunikira kwa IDSS ndi UP.
MOSFET zigawo zinayi
(3) Mphamvu yoyatsa
Voltage yotsegulira UT ndiye voteji pachipata mu MOSFET yokhazikika yomwe imapangitsa kuti gwero la inter-drain-source liziyenda bwino.
(4) Transconductance
Transconductance gm ndikutha kuwongolera kwa magetsi a chipata cha UGS pa ID yapano, mwachitsanzo, chiŵerengero cha kusintha kwa ID yapano pakusintha kwamagetsi amagetsi a UGS. 9m ndi gawo lofunikira lomwe limalemera luso la kukulitsaMOSFET.
(5) Kukhetsa magwero owononga magetsi
Kukhetsa gwero kuwonongeka voteji BUDS amatanthauza chipata gwero voteji UGS ndithu, MOSFET ntchito yachibadwa akhoza kuvomereza pazipita kukhetsa gwero voteji. Ichi ndi malire malire, owonjezeredwa ku magetsi ogwiritsira ntchito MOSFET ayenera kukhala osachepera BUDS.
(6) Kutaya Mphamvu Kwambiri
Kuchuluka kwamphamvu kwamphamvu PDSM ndi gawo la malire, limatanthawuzaMOSFETntchito si kuwonongeka pamene pazipita chovomerezeka kutayikira gwero gwero mphamvu dissipation. Mukamagwiritsa ntchito MOSFET mphamvu yogwiritsira ntchito mphamvu iyenera kukhala yochepa kuposa PDSM ndikusiya malire ena.
(7) Kukhetsa Kwambiri Panopa
Kuchulukirachulukira kwaposachedwa kwa IDSM ndi gawo lina la malire, limatanthawuza kugwira ntchito kwanthawi zonse kwa MOSFET, gwero lotayikira lazomwe zimaloledwa kudutsa pakalipano za MOSFET siziyenera kupitilira IDSM.
Mfundo Yogwiritsira Ntchito MOSFET
Mfundo yogwiritsira ntchito MOSFET (N-channel enhancement MOSFET) ndiyo kugwiritsa ntchito VGS kuwongolera kuchuluka kwa "inductive charge", kuti asinthe mawonekedwe a njira yoyendetsera yopangidwa ndi "inductive charge", kenako kukwaniritsa cholinga. kuwongolera mphamvu ya drainage. Cholinga chake ndikuwongolera mphamvu ya drainage. Popanga machubu, popanga ma ion ambiri abwino muzotchingira zosanjikiza, kotero mbali ina ya mawonekedwe amatha kupangitsidwa milandu yoyipa, milandu iyi yoyipa imatha kupangitsidwa.
Mphamvu yamagetsi yachipata ikasintha, kuchuluka kwa ndalama zomwe zimayendetsedwa munjira kumasinthanso, m'lifupi mwa njira yolumikizira imasinthanso, motero kukhetsa kwa ID komweko kumasintha ndi magetsi a pachipata.
Udindo wa MOSFET
I. MOSFET ingagwiritsidwe ntchito kukulitsa. Chifukwa cha kulowetsedwa kwakukulu kwa amplifier ya MOSFET, coupling capacitor imatha kukhala yaying'ono, popanda kugwiritsa ntchito ma electrolytic capacitor.
Chachiwiri, kulowetsedwa kwakukulu kwa MOSFET ndikoyenera kwambiri kutembenuza kwa impedance. Nthawi zambiri amagwiritsidwa ntchito pamagawo angapo amplifier athandizira kutembenuza kwa impedance.
MOSFET itha kugwiritsidwa ntchito ngati chopinga chosinthira.
Chachinayi, MOSFET itha kugwiritsidwa ntchito mosavuta ngati gwero lanthawi zonse.
Chachisanu, MOSFET itha kugwiritsidwa ntchito ngati chosinthira chamagetsi.
Nthawi yotumiza: Apr-12-2024
