Ichi ndi phukusiMOSFETpyroelectric infrared sensor. Chimango cha makona anayi ndi zenera lozindikira. G pin ndiye malo oyambira pansi, pini ya D ndiyo kukhetsa kwamkati kwa MOSFET, ndipo S pin ndiye gwero lamkati la MOSFET. Pozungulira, G imalumikizidwa pansi, D imalumikizidwa ndi magetsi abwino, ma infrared ma infrared amalowetsedwa kuchokera pawindo, ndipo ma siginecha amagetsi amachokera ku S.
Chipata cha chiweruzo G
Dalaivala wa MOS makamaka amatenga gawo la mawonekedwe a mafunde ndikuwongolera kuyendetsa: Ngati mawonekedwe a G siginechaMOSFETsichikhala chotsetsereka mokwanira, chimayambitsa kutayika kwakukulu kwa mphamvu panthawi yosinthira. Zotsatira zake ndi kuchepetsa kutembenuka kwa dera. MOSFET idzakhala ndi malungo aakulu ndipo imawonongeka mosavuta ndi kutentha. Pali capacitance ina pakati pa MOSFETGS. , ngati mphamvu yoyendetsa siginecha ya G ndiyosakwanira, imakhudza kwambiri nthawi yodumphira ya ma waveform.
Dulani pang'onopang'ono GS pole, sankhani mlingo wa R × 1 wa multimeter, gwirizanitsani mayeso akuda ku S pole, ndipo mayeso ofiira amatsogolera ku D pole. Kukana kuyenera kukhala pang'ono Ω kupitilira khumi Ω. Zikapezeka kuti kukana kwa pini inayake ndi zikhomo zake ziwiri ndizopanda malire, ndipo zimakhalabe zopanda malire pambuyo posinthanitsa mayendedwe oyesa, zimatsimikiziridwa kuti pini iyi ndi G pole, chifukwa imatsekedwa ndi zikhomo zina ziwiri.
Dziwani komwe kumachokera S ndikukhetsa D
Khazikitsani ma multimeter kukhala R × 1k ndikuyesa kukana pakati pa zikhomo zitatu motsatana. Gwiritsani ntchito njira yoyeserera yoyeserera kuti muyese kukana kawiri. Yemwe ili ndi mtengo wotsika wotsutsa (nthawi zambiri Ω zikwi zingapo kufika kupitirira zikwi khumi Ω) ndiyo kukana kutsogolo. Panthawiyi, chiwongolero chakuda chakuda ndi S pole ndipo chiwongolero chofiira chikugwirizanitsidwa ndi D pole. Chifukwa cha mayeso osiyanasiyana, mtengo woyezedwa wa RDS(pa) ndiwokwera kuposa mtengo womwe waperekedwa m'bukuli.
ZaMOSFET
Transistor ili ndi njira ya N-mtundu kotero imatchedwa N-channelMOSFET, kapenaNMOS. P-channel MOS (PMOS) FET iliponso, yomwe ndi PMOSFET yopangidwa ndi mtundu wa N-BACKGATE wocheperako komanso gwero la mtundu wa P ndi kukhetsa.
Mosasamala za mtundu wa N kapena P-mtundu wa MOSFET, mfundo yake yogwirira ntchito ndiyofanana. MOSFET imayang'anira zapano pa kukhetsa kwa chotulukapo ndi voteji yomwe imayikidwa pachipata cha malo olowera. MOSFET ndi chipangizo choyendetsedwa ndi magetsi. Imawongolera mawonekedwe a chipangizocho kudzera mumagetsi omwe amagwiritsidwa ntchito pachipata. Sizimayambitsa kusungirako ndalama zomwe zimayambitsidwa ndi maziko apano pamene transistor imagwiritsidwa ntchito posintha. Chifukwa chake, pakusintha mapulogalamu,Zithunzi za MOSFETayenera kusintha mofulumira kuposa transistors.
FET imapezanso dzina lake chifukwa cholowetsamo (chotchedwa chipata) chimakhudza zomwe zikuyenda kudzera pa transistor popanga gawo lamagetsi pagawo loteteza. M'malo mwake, palibe chomwe chikuyenda kudzera mu insulator iyi, kotero kuti GATE yapano ya FET chubu ndi yaying'ono kwambiri.
FET yodziwika kwambiri imagwiritsa ntchito wosanjikiza woonda wa silicon dioxide ngati insulator pansi pa GATE.
Mtundu uwu wa transistor umatchedwa metal oxide semiconductor (MOS) transistor, kapena, metal oxide semiconductor field effect transistor (MOSFET). Chifukwa ma MOSFET ndi ang'onoang'ono komanso amphamvu kwambiri, alowa m'malo mwa bipolar transistors m'mapulogalamu ambiri.
Nthawi yotumiza: Nov-10-2023
