Mfundo yogwira ntchito ya N-channel yowonjezeramo MOSFET

(1) Kuwongolera kwa vGS pa ID ndi njira

① Mlandu wa vGS=0

Zitha kuwoneka kuti pali magawo awiri obwerera kumbuyo kwa PN pakati pa drain d ndi magwero a njira yowonjezera.MOSFET.

Pamene chipata-gwero voteji vGS = 0, ngakhale kukhetsa-gwero voteji vDS kuwonjezedwa, ndipo mosasamala kanthu za polarity wa vDS, nthawi zonse PN mphambano mu m'mbuyo kukondera boma. Palibe njira yoyendetsera pakati pa kukhetsa ndi gwero, kotero kukhetsa kwa ID≈0 pakadali pano.

② Nkhani ya vGS> 0

Ngati vGS> 0, gawo lamagetsi limapangidwa mu SiO2 insulating wosanjikiza pakati pa chipata ndi gawo lapansi. Mayendedwe a gawo lamagetsi ndi perpendicular kumunda wamagetsi wolunjika kuchokera pachipata kupita ku gawo lapansi pamtunda wa semiconductor. Malo amagetsiwa amathamangitsa mabowo ndikukopa ma elekitironi. Mabowo othamangitsa: Mabowo amtundu wa P pafupi ndi chipata amathamangitsidwa, ndikusiya ma ion osasunthika (ma ion negative) kuti apange wosanjikiza wochepa. Kukopa ma elekitironi: Ma electron (onyamula ochepa) omwe ali mu gawo la P-mtundu amakopeka ndi gawo lapansi.

(2) Kupanga njira yoyendetsera:

Pamene mtengo wa vGS uli waung'ono ndipo kuthekera kokopa ma elekitironi sikuli kolimba, palibe njira yoyendetsera pakati pa kukhetsa ndi gwero. Pamene vGS ikuwonjezeka, ma electron ambiri amakopeka ndi gawo la P gawo lapansi. Pamene vGS ifika pamtengo wina, ma electrons amapanga N-mtundu woonda wosanjikiza pamwamba pa gawo la P pafupi ndi chipata ndipo amagwirizanitsidwa ndi zigawo ziwiri za N +, kupanga njira yoyendetsera mtundu wa N pakati pa kukhetsa ndi gwero. Mtundu wake wa conductivity ndi wosiyana ndi wa gawo la P, choncho umatchedwanso wosanjikiza. VGS yokulirapo ndiyo, mphamvu yamagetsi yomwe ikugwira ntchito pamtunda wa semiconductor ndi, ma elekitironi amakopeka kwambiri ndi gawo lapansi la P, njira yopititsira patsogolo imakhala yokulirapo, ndipo kukana kwa njira kumakhala kochepa. Mphamvu yamagetsi yachipata pamene tchanelo chikuyamba kupanga chimatchedwa mphamvu yamagetsi, yoimiridwa ndi VT.

TheN-channel MOSFETzomwe takambiranazi sizingapange njira yoyendetsera pamene vGS <VT, ndipo chubu ili mumkhalidwe wodulidwa. Pokhapokha vGS≥VT ingapangidwe njira. Mtundu uwuMOSFETyomwe imayenera kupanga njira yoyendetsera pamene vGS≥VT imatchedwa njira yowonjezeraMOSFET. Njira ikapangidwa, kukhetsa kwamagetsi kumapangidwa pomwe voliyumu yakutsogolo vDS imayikidwa pakati pa kukhetsa ndi gwero. Chikoka cha vDS pa ID, pamene vGS> VT ndipo ndi mtengo wina, chikoka cha drain-source voltage vDS pa conductive channel ndi ID panopa n'chimodzimodzi ndi mphambano field effect transistor. Kutsika kwamagetsi komwe kumapangidwa ndi ID yapano panjira panjira kumapangitsa kuti ma voltages pakati pa mfundo iliyonse munjirayo ndi chipata chisakhalenso chofanana. Mpweya womwe uli kumapeto pafupi ndi gwero ndi waukulu kwambiri, kumene njirayo imakhala yochuluka kwambiri. Mpweya wothamanga pamapeto pake ndi wochepa kwambiri, ndipo mtengo wake ndi VGD=vGS-vDS, kotero kuti njirayo ndiyo thinnest pano. Koma vDS ikakhala yaying'ono (vDS